Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK9Y11-30B,115, MOSFET

1. Product proﬁle

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP High-Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

BUK9Y11-30B

N-channel TrenchMOS logic level FET

Rev. 01 — 30 August 2007 Product data sheet

n Very low on-state resistance n Q101 compliant

n 175 °C rated n Logic level compatible

n Automotive systems n General purpose power switching

n Motors, lamps and solenoids n 12 V loads

n E

DS(AL)S

≤ 112 mJ n R

DSon

= 9.3 mΩ (typ)

n I

≤ 59 A n P

tot

≤ 75 W

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1, 2, 3 source (S)

SOT669 (LFPAK)

4 gate (G)

mb mounting base; connected to drain (D)

1234

S1 S2 S3

mbl798

Summary of content (12 pages)

PAGE 1
BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features n Very low on-state resistance n 175 °C rated n Q101 compliant n Logic level compatible 1.3 Applications n Automotive systems n Motors, lamps and solenoids n General purpose power switching n 12 V loads 1.
PAGE 2
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number BUK9Y11-30B Package Name Description Version LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 3
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab844 120 003aaa846 60 ID (A) Pder (%) 80 40 40 20 0 0 0 50 100 150 200 0 50 100 150 Tmb (°C) 200 VGS ≥ 5 V P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2.
PAGE 4
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base - Conditions Min Typ Max Unit - - 2 K/W 003aaa848 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 δ= P 0.02 t tp single shot tp T T -2 10 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4.
PAGE 5
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V gate-source threshold voltage drain leakage current ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 1.1 1.5 2 V Tj = 175 °C 0.
PAGE 6
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab405 160 15 ID (A) 10 003aab407 12 5 RDSon (mΩ) 120 10 4 3.8 3.6 3.4 3.2 3 80 8 2.8 40 6 2.6 2.4 VGS (V) = 2.2 0 0 2 4 6 8 4 10 VDS (V) 3 9 12 15 VGS (V) Tj = 25 °C Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6.
PAGE 7
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab986 2.5 003aab987 10−1 ID (A) VGS(th) (V) 2.0 10−2 max min 1.5 typ min 1.0 typ max 10−3 10−4 10−5 0.5 10−6 0.0 −60 0 60 120 180 0 1 2 Tj (°C) 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 003aab409 60 Fig 10.
PAGE 8
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab408 50 003aab404 5 VGS (V) ID (A) 4 40 VDS = 14 V VDS = 24 V 30 3 20 2 Tj = 175 °C 10 1 Tj = 25 °C 0 0 0 1 2 0 3 5 10 15 20 QG (nC) VGS (V) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aab403 50 Fig 14.
PAGE 9
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.
PAGE 10
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9Y11-30B_1 20070830 Product data sheet - - BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
PAGE 11
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 12
BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . .