Datasheet

NXP Semiconductors
BUK9Y11-80E
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
BUK9Y11-80E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 8 May 2013 3 / 13
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C - 84 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 336 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 84 A; V
sup
≤ 80 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 3
[3][4] - 112.8 mJ
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering T
j
and or V
GS
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Refer to application note AN10273 for further information.
003aaj290
0 30 60 90 120 150 180
0
20
40
60
80
100
T
j
(°C)
I
D
I
D
(A)(A)
Fig. 1. Continuous drain current as a function of
mounting base temperature
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature