Datasheet

NXP Semiconductors
BUK9Y113-100E
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
BUK9Y113-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 8 May 2013 8 / 13
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0
0.6
1.2
1.8
2.4
3
-60 0 60 120 180
T
j
(
°C)
a
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 13. Gate charge waveform definitions
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0
2
4
6
8
10
0 4 8 12 16
Q
G
(nC)
V
GS
(V)
V
DS
= 80VV
DS
= 14V
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
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10
10
2
10
3
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values