Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBUK9Y14-40B,115, MOSFET

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

BUK9Y14-40B

N-channel TrenchMOS logic level FET

Rev. 03 — 2 June 2008 Product data sheet

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for logic level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

 Air bag  Automotive ABS systems

 Automotive transmission control  Diesel injection systems

 Fuel pump and injection  Motors, lamps and solenoids

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C --40V

drain current V

=5V; T

=25°C;

see Figure 4 and 1

--56A

tot

total power dissipation T

=25°C; see Figure 2 --85W

Dynamic characteristics

gate-drain charge V

=5V; I

=10A;

= 32 V; see Figure 14

-9-nC

Static characteristics

DSon

drain-source on-state

resistance

=5V; I

=20A;

=25°C; see Figure 12 and

- 1214mΩ

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

=56A; V

sup

≤ 40 V;

=50Ω; V

=5V;

j(init)

=25°C; unclamped

--89mJ

Summary of content (12 pages)

PAGE 1
BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1, 2, 3 S source 4 G gate mb D mounting base; connected to drain Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number BUK9Y14-40B Package Name Description Version LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab217 60 03na19 120 ID (A) Pder (%) 40 80 20 40 0 0 0 50 100 150 Tmb (°C) 0 200 50 100 150 200 Tmb (°C) VGS 5V P der = Fig 1. Continuous drain current as a function of mounting base temperature P tot P tot (25°C ) × 100 % Fig 2.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab218 103 Limit RDSon = VDS / ID ID (A) 102 tp = 10 μs 100 μs 10 1 ms DC 10 ms 1 100 ms 10−1 1 102 10 VDS (V) Tmb = 25 °C; IDM is single pulse Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 μA; VGS = 0 V; Tj = 25 °C 40 - - V ID = 250 μA; VGS = 0 V; Tj = -55 °C 36 - - V - - 2.3 V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 and 10 1.1 1.5 2 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 0.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab413 160 ID (A) 15 6 003aab415 15 RDSon (mΩ) 5 120 12 4 3.8 3.6 3.4 3.2 3 80 40 9 2.8 2.6 2.4 VGS (V) = 2.2 0 0 2 4 6 8 6 10 VDS (V) 3 7 11 15 VGS (V) T j = 25 °C T j = 25 °C; ID = 20 A Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 003aab417 50 Fig 7.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 03ng53 10−1 03ng52 2.5 ID (A) VGS(th) (V) 10−2 2.0 min typ max 10−3 1.5 10−4 1.0 10−5 0.5 10−6 0 1 max 2 3 VGS (V) typ min 0 −60 T j = 25 °C;VDS = VGS 0 60 120 180 Tj (°C) ID = 1 m A;VDS = VGS Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab851 2 Fig 11. Gate-source threshold voltage as a function of junction temperature 003aab414 30 a VGS (V) = 3 RDSon (mΩ) 3.4 3.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab412 5 003aab410 2500 VGS (V) C (pF) 4 2000 Ciss VDS = 14 V 3 1500 VDS = 32 V 2 1000 1 500 0 0 5 10 15 Coss Crss 0 10−1 20 25 QG (nC) 1 102 10 VDS (V) T j = 25 °C; ID = 10 A VGS = 0V ; f = 1 M H z Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status BUK9Y14-40B_3 20080602 Product data sheet Modifications: • Change notice Supersedes BUK9Y14-40B_2 Table 4 VDS temperature operating range corrected BUK9Y14-40B_2 20080523 Product data sheet - BUK9Y14-40B_1 BUK9Y14-40B_1 20070903 Product data sheet - - BUK9Y14-40B_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BUK9Y14-40B NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . .