Datasheet

L
F
P
A
K
5
6
BUK9Y153-100E
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56
27 June 2014 Product data sheet
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1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
•
Q101 compliant
•
Repetitive avalanche rated
•
Suitable for thermally demanding environments due to 175 °C rating
•
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
•
12 V, 24 V and 48 V Automotive systems
•
Motors, lamps and solenoid control
•
Transmission control
•
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
= 5 V; T
mb
= 25 °C; Fig. 2 - - 9.4 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 37 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 2 A; T
j
= 25 °C; Fig. 11 - 122 153 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 5 V; I
D
= 2 A; V
DS
= 80 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 3.1 - nC