Datasheet

BUK9Y22-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 2 of 14
NXP Semiconductors
BUK9Y22-30B
N-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=37.7A; V
sup
≤ 30 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
--47mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=5V; I
D
=20A;
V
DS
=24V; see Figure 14
-4.5-nC
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1Ssource
SOT669 (LFPAK)
2Ssource
3Ssource
4 G gate
mb D mounting base; connected to
drain
mb
1234
S1 S2 S3
D
G
m
bl798
Table 3. Ordering information
Type number Package
Name Description Version
BUK9Y22-30B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669