Datasheet

BUK9Y22-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 6 of 14
NXP Semiconductors
BUK9Y22-30B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 27 - - V
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 30--V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
1.1 1.5 2 V
V
GSth
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10
; see Figure 11
0.5--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10; see Figure 11
--2.3V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
V
DS
=30V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=15V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-15V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=20A; T
j
=25°C;
see Figure 12; see Figure 13
- 1722mΩ
V
GS
=4.5V; I
D
=20A; T
j
=25°C --24mΩ
V
GS
=5V; I
D
=20A; T
j
= 175 °C;
see Figure 12
--44mΩ
V
GS
=10V; I
D
=20A; T
j
= 25 °C - 13.5 19 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=20A; V
DS
=24V; V
GS
=5V;
see Figure 14
- 10.5 - nC
Q
GS
gate-source charge - 3.3 - nC
Q
GD
gate-drain charge - 4.5 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 15
- 705 940 pF
C
oss
output capacitance - 188 226 pF
C
rss
reverse transfer
capacitance
- 102 140 pF
t
d(on)
turn-on delay time V
DS
=25V; R
L
=1.25Ω; V
GS
=5V;
R
G(ext)
=10Ω
-8.7-ns
t
r
rise time - 18.5 - ns
t
d(off)
turn-off delay time - 42 - ns
t
f
fall time - 23 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=10A; V
GS
=0V; T
j
=25°C;
see Figure 16
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V
-30-ns
Q
r
recovered charge - 33 - nC