Datasheet

BUK9Y22-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 8 of 14
NXP Semiconductors
BUK9Y22-30B
N-channel TrenchMOS logic level FET
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
(°C)
−60 180120060
003aab986
1.0
1.5
0.5
2.0
2.5
V
GS(th)
(V)
0.0
min
typ
max
003aab987
V
GS
(V)
0321
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
T
j
(°C)
−60 180120060
003aab851
1
0.5
1.5
2
a
0
003aac964
9
15
21
27
33
0481216
V
GS
(V)
R
DSON
(mΩ)