Datasheet

2004 Mar 22 4
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SOD323 standard mounting conditions.
CHARACTERISTICS
Total BZX384-B and C series
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 250 mA
I
ZSM
non-repetitive peak reverse current t
p
= 100 μs; square wave;
T
amb
= 25 °C; prior to surge
see Table s 1 and 2 A
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100 μs; square wave;
T
amb
= 25 °C; prior to surge
− 40 W
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 300 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage I
F
= 10 mA; see Fig.3 0.9 V
I
F
= 100 mA; see Fig.3 1.1 V
I
R
reverse current;
BZX384-B/C2V4 V
R
= 1 V 50 μA
BZX384-B/C2V7 V
R
= 1 V 20 μA
BZX384-B/C3V0 V
R
= 1 V 10 μA
BZX384-B/C3V3 V
R
= 1 V 5 μA
BZX384-B/C3V6 V
R
= 1 V 5 μA
BZX384-B/C3V9 V
R
= 1 V 3 μA
BZX384-B/C4V3 V
R
= 1 V 3 μA
BZX384-B/C4V7 V
R
= 2 V 3 μA
BZX384-B/C5V1 V
R
= 2 V 2 μA
BZX384-B/C5V6 V
R
= 2 V 1 μA
BZX384-B/C6V2 V
R
= 4 V 3 μA
BZX384-B/C6V8 V
R
= 4 V 2 μA
BZX384-B/C7V5 V
R
= 5 V 1 μA
BZX384-B/C8V2 V
R
= 5 V 700 nA
BZX384-B/C9V1 V
R
= 6 V 500 nA
BZX384-B/C10 V
R
= 7 V 200 nA
BZX384-B/C11 V
R
= 8 V 100 nA
BZX384-B/C12 V
R
= 8 V 100 nA
BZX384-B/C13 V
R
= 8 V 100 nA
BZX384-B/C15 to 75 V
R
= 0.7V
Znom
50 nA