Datasheet
IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 14 December 2012 3 of 18
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD protection diodes
4. Limiting values
[1] Device tested with over 1000 pulses of 30 kV contact discharges, according to the IEC 61000-4-2 model.
[2] Severe self-heating demands a heat-dissipation optimized Printed-Circuit Board (PCB) to prevent the device from de-soldering. For
ambient temperature above 50 C, the guaranteed life time is 48 hours at 0.7 W, assuming R
th
to be 130 K/W as specified in Table 4.
[3] Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time.
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RWM
reverse standoff voltage IP4085CX4; IP4386CX4 0.5 +14 V
IP4385CX4 0.5 +5.5 V
IP4387CX4 0.5 +8.0 V
V
ESD
electrostatic discharge voltage all pins to ground
contact discharge
[1]
30 +30 kV
air discharge
[1]
15 +15 kV
IEC 61000-4-2, level 4;
all pins to ground
contact discharge 8+8kV
air discharge 15 +15 kV
I
PP
peak pulse current IEC 61000-4-5; t
p
= 8/20 s
IP4085CX4 60 - A
IP4385CX4; IP4387CX4 33 - A
IP4386CX4 28 - A
I
FSM
non-repetitive peak forward
current
10 pulses; 1 pulse per
second
IP4085CX4; IP4386CX4;
t
p
=2ms
10 - A
IP4085CX4; IP4386CX4;
t
p
=5ms
8.5 - A
IP4085CX4; IP4386CX4;
t
p
= 100 ms
3.5 - A
IP4385CX4; IP4387CX4;
t
p
=2ms
11 - A
IP4385CX4; IP4387CX4;
t
p
=5ms
9- A
IP4385CX4; IP4387CX4;
t
p
= 100 ms
5- A
P
tot
total power dissipation forward conducting
[2]
IP4085CX4
[3]
-1W
IP4385CX4; IP4386CX4;
IP4387CX4
[3]
-0.7W
T
stg
storage temperature 55 +150 C
T
reflow(peak)
peak reflow temperature t
p
10 s - 260 C
T
amb
ambient temperature 30 +85 C