Datasheet

IP4085_4385_4386_4387_CX4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 14 December 2012 4 of 18
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD protection diodes
5. Thermal characteristics
[1] Depends on details of PCB layout.
6. Characteristics
[1] T
amb
 +25 C
[2] 30 C  T
amb
 +85 C
Table 4. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction
to ambient
on a 2-layer PCB
[1]
130 K/W
Table 5. Electrical characteristics
T
amb
= 25  C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
BR
breakdown voltage I
R
= 15 mA
IP4085CX4; IP4386CX4 16 - - V
IP4385CX4 7.0 - - V
IP4387CX4 10 - - V
V
CL
clamping voltage I
R
=1A; T
amb
 85 C at surge peak
pulse, according to IEC 61000-4-5
IP4085CX4 - - 20 V
IP4385CX4 - - 10 V
IP4386CX4 - - 20 V
IP4387CX4 - - 13 V
I
RM
reverse leakage current
IP4085CX4; IP4385CX4
V
R
=+5V
--200nA
IP4386CX4; V
R
= +14 V - - 200 nA
IP4387CX4; V
R
=+8V --800nA
C
d
diode capacitance V
R
=0 V; f=1 MHz
IP4085CX4 - 180 - pF
IP4385CX4 - 450 - pF
IP4386CX4 - 160 - pF
IP4387CX4 - 290 - pF
V
F
forward voltage I
F
=850mA
IP4085CX4
[1]
--1.15V
[2]
--1.3V
IP4385CX4
[1]
--1.0V
[2]
--1.1V
IP4386CX4
[1]
--1.15V
[2]
--1.3V
IP4387CX4
[1]
--1.10V
[2]
--1.25V