Datasheet

1996 Nov 15 4
Philips Semiconductors Objective specification
Magnetic field sensor KMZ51
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
bridge supply voltage − 5 8 V
H
y
operating range in sensitive
direction
−0.2 − +0.2 kA/m
H
x
operating range perpendicular to
sensitive direction
−0.2 − +0.2 kA/m
S sensitivity open circuit 12 16 −
TCV
O
temperature coefficient of
output voltage
V
CC
= 5 V;
T
amb
= −25 to +125 °C
− −0.4 − %/Kµ
I
CC
= 3 mA;
T
amb
= −25 to +125 °C
− −0.1 − %/K
R
bridge
bridge resistance resistance pins 2 to 3 1 − 3 kΩ
TCR
bridge
temperature coefficient of
bridge resistance
T
bridge
= −25 to +125 °C − 0.3 − %/K
V
offset
offset voltage −1.5 − +1.5 mV/V
TCV
offset
temperature coefficient of offset
voltage
T
bridge
= −25 to +125 °C −3 − +3
FH hysteresis of output voltage − − 2 %FS
R
comp
resistance of compensation
conductor
resistance pins 4 to 5 100 170 300 Ω
A
comp
field factor of compensation
conductor
19 22 25 A/m/mA
R
flip
resistance of set/reset conductor resistance pins 1 to 8 1 3 5 Ω
I
flip
recommended flipping current
for stable operation
±800 ±1000 ±1200 mA
t
flip
flip pulse duration; 1 3 100 µs
R
isol
isolating resistance resistance pins 1 to 2,
1 to 4, 2 to 4
1 − − MΩ
V
isol
voltage between isolated
systems
voltage pins 1 to 2, 1 to 4,
2 to 4
− − 50 V
f operating frequency 0 − 1 MHz
mV V
⁄
kA m⁄
-----------------
µV V⁄
K
---------------