Datasheet

LPC1850_30_20_10 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6.4 — 18 August 2014 145 of 150
NXP Semiconductors
LPC1850/30/20/10
32-bit ARM Cortex-M3 microcontroller
LPC1850_30_20_10 v.6.2 20131014 Product data sheet - LPC1850_30_20_10 v.6.1
Modifications:
• Parameter I
LH
(High-level leakage current) for condition V
I
= 5 V changed to 20 nA
(max). See Table 10.
• Parameter V
DDA(3V3)
added for pins USB0_VDDA3V3_DRIVER and
USB0_VDDA3V3 in Table 10.
• Corrected max voltage on pins USB0_DP, USB0_DM, USB0_VBUS, USB1_DP, and
USB1_DM in Table 6 and Table 10 to be consistent with USB specifications.
• Description of RESET pin updated in Table 3.
• Table note 8 added in Table 10.
• Timing parameters in Table 28 “Dynamic characteristics: SD/MMC” corrected.
• Band gap characteristics removed.
• Part LPC1850FBD208 removed.
• OTP memory size available for general-purpose use corrected.
LPC1850_30_20_10 v.6.1 20130207 Product data sheet - LPC1850_30_20_10 v.6
Modifications:
• Table 13 “Band gap characteristics” and Figure 20 “Band gap voltage for different
temperatures and process conditions” added.
• Table 10, added Table note 2: “Dynamic characteristics for peripherals are provided
for V
DD(REG)(3V3)
 2.7 V.
• Description of ADC pins on digital/analog input pins changed. Each input to the ADC
is connected to ADC0 and ADC1. See Table 3.
• Use of C_CAN peripheral restricted in Section 2.
• ADC channels limited to a total of 8 channels shared between ADC0 and ADC1.
• Minimum value for parameter V
IL
changed to 0 V in Table 10 “Static characteristics”.
• Power consumption in active mode corrected. See parameter I
DD(REG)(3V3)
in Table 10
and graphs Figure 11, Figure 12, and Figure 13.
• Parameter name I
DD(ADC)
changed to I
DDA
in Table 10.
• Added note to limit data in Table 23 “Dynamic characteristics: Static asynchronous
external memory interface” to single memory accesses.
• Value of parameter I
DD(REG)(3V3)
in deep power-down increased to 0.03 μA in
Table 10.
• Value of parameter I
DD(IO)
in deep power-down increased to 0.05 μA in Table 10.
Table 40. Revision history …continued
Document ID Release date Data sheet status Change notice Supersedes