Datasheet

LPC185X_3X_2X_1X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4.1 — 6 May 2014 104 of 148
NXP Semiconductors
LPC185x/3x/2x/1x
32-bit ARM Cortex-M3 microcontroller
11. Dynamic characteristics
11.1 Flash/EEPROM memory
[1] Number of erase/program cycles.
[2] Programming times are given for writing 512 bytes from RAM to the flash. Data must be written to the flash
in blocks of 512 bytes.
[1] See the LPC18xx user manual how to program the wait states for the different read (RPHASEx) and erase/program phases (PHASEx)
Table 14. Flash characteristics
T
amb
=  40  C to +105  C, unless otherwise specified. V
DD(REG)(3V3)
= 2,2 V to 3.6 V for read
operations; V
DD(REG)(3V3)
= 2.7 V to 3.6 V for erase/program operations.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance sector erase/program
[1]
10000 - - cycles
page erase/program; page
in large sector
1000 - - cycles
page erase/program; page
in small sector
10000 - - cycles
t
ret
retention time powered 10 - - years
unpowered 10 - - years
t
er
erase time page, sector, or multiple
consecutive sectors
-50-ms
t
prog
programming
time
[2]
-1-ms
Table 15. EEPROM characteristics
T
amb
=  40  Cto+105  C; V
DD(REG)(3V3)
= 2.7 V to 3.6 V.
Symbol Parameter Conditions Min Typ Max Unit
f
clk
clock frequency 800 1500 1600 kHz
N
endu
endurance 100 000 - - cycles
t
ret
retention time T
amb
= 40 Cto+85C 20 - - years
85 C < T
amb
 105 C 10 - - years
t
a
access time read - 120 - ns
erase/program;
f
clk
= 1500 kHz
-1.99-ms
erase/program;
f
clk
= 1600 kHz
-1.87-ms
t
wait
wait time read; RPHASE1
[1]
35 - - ns
read; RPHASE2
[1]
70 - - ns
write; PHASE1
[1]
20 - - ns
write; PHASE2
[1]
40 - - ns
write; PHASE3
[1]
10 - - ns