Datasheet

LPC2387 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5.1 — 16 October 2013 40 of 66
NXP Semiconductors
LPC2387
Single-chip 16-bit/32-bit MCU
10.1 Power-down mode
V
i(VBAT)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C.
Fig 4. I/O maximum supply current I
DD(IO)
versus temperature in Power-down mode
V
DD(3V3)
= V
DD(DCDC)(3V3)
= 3.3 V; T
amb
=25C.
Fig 5. RTC battery maximum supply current I
BAT
versus temperature in Power-down
mode
002aae049
−2
2
0
4
I
DD(IO)
(μA)
−4
temperature (°C)
−40 853510 60−15
V
DD(3V3)
= 3.3 V
V
DD(3V3)
= 3.0 V
002aae050
V
i(VBAT)
= 3.3 V
V
i(VBAT)
= 3.0 V
10
30
20
40
I
BAT
(μA)
0
temperature (°C)
−40 853510 60−15