- NXP ARM Microcontroller Product Data Sheet

DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
F
T DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
D
RAFT DRA
F
T DRAFT DRAFT DRAFT DRA
LPC2917_19_1 © NXP B.V. 2007. All rights reserved.
Preliminary data sheet Rev. 1.01 — 15 November 2007 54 of 68
NXP Semiconductors
LPC2917/19
ARM9 microcontroller with CAN and LIN
I
LIL
LOW-state input leakage
current.
--1μA
I
I(pd)
Pull-down input current. All port pins, V
I
= 3.3 V;
V
I
= 5.5 V.
25 50 100 μA
I
I(pu)
Pull-up input current. All port pins, RESET_N,
TRST_N, TDI,
JTAGSEL, TMS: V
I
=0
V; V
I
> 3.6 V is not
allowed.
−25 −50 −100 μA
C
i
Input capacitance.
[3]
-38pF
Output pins and I/O pins configured as output
V
O
Output voltage. 0 - V
DD(IO)
V
V
OH
HIGH-state output
voltage.
I
OH
= −4mA V
DD(IO)
–0.4 - - V
V
OL
LOW-state output voltage. I
OL
=4mA - - 0.4 V
C
L
Load capacitance. - - 25 pF
Analog-to-digital converter supply
V
VREFN
Voltage on pin VREFN. 0 - V
VREFP
− 2V
V
VREFP
Voltage on pin VREFP. V
VREFN
+2 - V
DD(A3V3)
V
V
I(ADC)
ADC input voltage on
port 0 pins
Port 0. V
VREFN
-V
VREFP
V
Z
i
Input impedance. Between VREFN and
VREFP
4.4 - - kΩ
Between VREFN and
VDD(A5V)
13.7 - 23.6 kΩ
FSR Full scale range. 2 - 10 bit
INL Integral non-linearity. −1-+1LSB
DNL Differential non-linearity. −1-+1LSB
V
err(offset)
Offset error voltage. −20 - +20 mV
V
err(FS)
Full-scale error voltage. −20 - +20 mV
Table 30. Static characteristics
…continued
V
DD(CORE)
=V
DD(OSC_PLL)
; V
DD(IO)
= 2.7 V to 3.6 V; V
DD(A3V3)
= 3.0 V to 3.6 V; T
vj
=-40 ° Cto+125 ° C; all voltages are
measured with respect to ground; positive currents flow into the IC; unless otherwise specified.
[1]
Symbol Parameter Conditions Min Typ Max Unit