- NXP ARM Microcontroller Product Data Sheet

Table Of Contents
DR
AFT
DR
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DRAFT
DR
D
RAFT
DRAFT
DRA
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T DRAF
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RAFT DRAFT DRAFT DRAFT DRAFT D
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LPC2917_19_1 © NXP B.V. 2007. All rights reserved.
Preliminary data sheet Rev. 1.01 — 15 November 2007 57 of 68
NXP Semiconductors
LPC2917/19
ARM9 microcontroller with CAN and LIN
[1] All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
amb
=125°C ambient
temperature on wafer level. Cased products are tested at T
amb
=25°C (final testing). Both pre-testing and final testing use correlated
test conditions to cover the specified temperature and power supply voltage range.
[2] This parameter is not part of production testing or final testing, hence only a typical value is stated.
[3] Oscillator start-up time depends on the quality of the crystal. For most crystals it takes about 1000 clock pulses until the clock is fully
stable.
[4] Duty cycle clock should be as close as possible to 50%.
t
a(W)int
Internal write-access
time.
- - 24.9 ns
UART
f
UART
UART frequency.
1
65024
f
clk(uart)
-
1
2
f
clk(uart)
MHz
SPI
f
SPI
SPI operating
frequency.
Master operation.
1
65024
f
clk(spi)
-
1
2
f
clk(spi)
MHz
Slave operation.
1
65024
f
clk(spi)
-
1
4
f
clk(spi)
MHz
Jitter Specification
CANt
jit(cc)(p-p)
CAN TXD pin
Cycle-to-cycle jitter
(peak-to-peak value).
[2]
-0.41ns
Table 31. Dynamic characteristics
…continued
V
DD(CORE)
=V
DD(OSC_PLL)
; V
DD(IO)
= 2.7 V to 3.6 V; V
DD(A3V3)
= 3.0 V to 3.6 V; T
vj
=
40
°
C; all voltages are measured with
respect to ground; positive currents flow into the IC; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit