Datasheet

DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
F
T DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
D
RAFT DRA
F
T DRAFT DRAFT DRAFT DRA
LPC3152_3154 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Preliminary data sheet Rev. 0.12 — 27 May 2010 50 of 88
NXP Semiconductors
LPC3152/3154
SUP4; SUP8;
3.3 V mode
[1]
<tbd> 50 <tbd> μA
SUP3
[1]
<tbd> 50 <tbd> μA
C
i
input capacitance excluding bonding pad
capacitance
- - <tbd> pF
Output pins and I/O pins configured as output
V
O
output voltage <tbd> - V
DD(IO)
V
V
OH
HIGH-level output
voltage
SUP4; SUP8;
I
OH
= 6 mA:
1.8 V mode <tbd> <tbd> <tbd> V
3.3 V mode V
DD(IO)
− 0.26 <tbd> <tbd> V
SUP3; I
OH
= 6 mA V
DD(IO)
− 0.26 - - V
SUP3; I
OH
= 30 mA V
DD(IO)
− 0.38 - - V
V
OL
LOW-level output
voltage
SUP4; SUP8 outputs;
I
OL
= 4 mA
1.8 V mode <tbd> <tbd> <tbd> V
3.3 V mode
[1]
<tbd> 0.65 <tbd> V
SUP3; I
OL
= 4 mA - - <tbd> V
I
OH
HIGH-level output
current
V
DD
= VDDE_IOx
(x = A, B, C);
V
OH
= V
DD
− 0.4 V
<tbd> - - mA
V
DD
= VDDE_IOx
(x = A, B, C);
V
OH
= V
DD
− 0.4 V
<tbd> - - mA
I
OL
LOW-level output
current
V
DD
= VDDE_IOx
(x = A, B, C);
V
OL
= 0.4 V
<tbd> - - mA
V
DD
= VDDE_IOx
(x = A, B, C);
V
OL
= 0.4 V
<tbd> - - mA
I
OZ
OFF-state output
current
V
O
= 0 V; V
O
=V
DD
;
no pull-up/down
- - 0.064 μA
I
OHS
HIGH-level
short-circuit output
current
V
DD
= VDDE_IOx
(x = A, B, C); V
OH
= 0 V
- - <tbd> mA
V
DD
= VDDE_IOx
(x = A, B, C); V
OH
= 0 V
- - <tbd> mA
I
OLS
LOW-level short-circuit
output current
V
DD
= VDDE_IOx
(x = A, B, C); V
OL
= V
DD
- - <tbd> mA
V
DD
= VDDE_IOx
(x = A, B, C); V
OL
= V
DD
- - <tbd> mA
Z
o
output impedance V
DD
= VDDE_IOx
(x = A, B, C)
1.8 V mode
[1]
<tbd> 45 <tbd> Ω
3.3 V mode
[1]
<tbd> 35 <tbd> Ω
Table 13: Static characteristics
T
amb
= − 40 ° C to +85 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit