Datasheet

DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
F
T DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
D
RAFT DRA
F
T DRAFT DRAFT DRAFT DRA
LPC3152_3154 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Preliminary data sheet Rev. 0.12 — 27 May 2010 67 of 88
NXP Semiconductors
LPC3152/3154
EBI_CKE is HIGH.
Fig 23. SDRAM burst read timing
EBI_A_[15:2]
EBI_DQMx
EBI_D_[15:0]
EBI_CLKOUT
EBI_NRAS_BLOUT
EBI_NCAS_BLOUT
EBI_NWE
EBI_CKE
EBI_NDYCS
t
h(o)
t
h(o)
t
h(A)
t
su(D)
t
h(D)
READ
NOP
NOP NOP NOP
NOP
READ
BANK,
COLUMN
002aae121
T
CLCL
t
CHCX
t
CLCX
t
d(o)
t
d(o)
CAS
LATENCY = 2
DATA n
DATA n+1
DATA n+2
DATA n+3