Datasheet

DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
F
T DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
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LPC3152_3154 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Preliminary data sheet Rev. 0.12 — 27 May 2010 78 of 88
NXP Semiconductors
LPC3152/3154
10.3 Analog die/audio system
[1] Measured with 20 kHz block filter.
Table 34. Dynamic characteristics of Class AB amplifier
T
amb
= − 40 ° C to +85 ° C unless otherwise specified. V
DD(ADC)
= 3.3 V on pin ADC_VDDA33.
Symbol Parameter Conditions Min Typ Max Unit
V
o
output voltage HP unloaded - 800 - mV(RMS)
P
o
output power per channel; RL=16 Ω 23.5 mW
(THD+N)/S Total harmonic distortion plus
noise-to-signal ratio
at 0 dBFS; f
in
= 1 kHz;
RL=16 Ω
[1]
- −60 - dB
at −60 dBFS; f
in
= 1 kHz;
RL=16 Ω
- −40 −30 dBA
S/N Signal-to-noise ratio
[1]
- 100 - dBA
PSRR power supply ripple rejection - 6 - dB
α
ct(ch)
channel crosstalk RL=16 Ω; between left
channel and right
channel
- −55 - dB
Table 35: Dynamic characteristic for analog in
T
amb
= − 40 ° C to +85 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
B Bandwidth - - 20 kHz
Tuner
(THD+N)/S Total harmonic distortion
plus noise-to-signal ratio
at 0 dBFS; f
in
= 1 kHz; Line input
level = 1 V; PGA setting +12 dB;
external resistor of 36 kΩ
- −83 −80 dB
at 0 dBFS; f
in
= 1 kHz; Line input
level = 1 V, PGA setting 0 dB
--70- dB
at −60 dBFS; A-weighted; f
in
=
1 kHz; Line input level = 1mV, PGA
setting 0dB
- −34 −30 dBA
S/N Signal-to-noise ratio A-weighted; line input = 1 V, PGA
setting 0 dB
90 94 - dBA
Z
i
input impedance line in (tuner mode) - 12 - kΩ
Microphone
THD total harmonic distortion V
i
= 20 mV; f
in
= 1 kHz - −70 −60 dB
V
i
= 0.3 mV; f
in
= 1 kHz - −90 −80 dB
Z
i
input impedance microphone mode - 5 - kΩ