Datasheet

LPC3220_30_40_50 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2.1 — 24 June 2014 45 of 80
NXP Semiconductors
LPC3220/30/40/50
16/32-bit ARM microcontrollers
9. Limiting values
[1] The following applies to Table 7:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated
maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to V
SS
unless
otherwise noted.
[2] Core, PLL, oscillator, and RTC supplies; applies to pins VDD_CORE, VDD_COREFXD, VDD_OSC, VDD_PLL397, VDD_PLLHCLK,
VDD_PLLUSB, VDD_RTC, VDD_RTCCORE, and VDD_RTCOSC.
[3] I/O pad supply; applies to domains VDD_EMC.
[4] Applies to VDD_AD pins.
[5] Applies to pins in the following domains VDD_IOA, VDD_IOB, VDD_IOC, and VDD_IOD.
[6] Including voltage on outputs in 3-state mode.
[7] Based on package heat transfer, not device power consumption. Calculated package thermal resistance (Theta
JA
): 35.766 C/W (with
JEDEC Test Board and 0 m/s airflow, 15 % accuracy).
[8] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor.
[9] Charge device model per AEC-Q100-011.
Table 7. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol Parameter Conditions Notes Min Max Unit
V
DD(1V2)
supply voltage (1.2 V)
[2]
0.5 +1.4 V
V
DD(EMC)
external memory controller
supply voltage
[3]
0.5 +4.6 V
V
DDA(3V3)
analog supply voltage (3.3 V)
[4]
0.5 +4.6 V
V
DD(IO)
input/output supply voltage
[5]
0.5 +4.6 V
V
IA
analog input voltage 0.5 +4.6 V
V
I
input voltage 1.8 V pins
[6]
0.5 +2.4 V
3.3 V pins
[6]
0.5 +4.6 V
I
DD
supply current per supply pin - 100 mA
I
SS
ground current per ground pin - 100 mA
T
stg
storage temperature 65 +150 C
P
tot(pack)
total power dissipation
(per package)
max. junction temp 125 C
max. ambient temp 85 C
[7]
-1.12W
V
ESD
electrostatic discharge voltage HBM
[8]
- 2500 V
CDM
[9]
- 1000 V