Datasheet

LPC3220_30_40_50 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2.1 — 24 June 2014 67 of 80
NXP Semiconductors
LPC3220/30/40/50
16/32-bit ARM microcontrollers
[1] T
HCLK
= 1/HCLK
[2] Rsu = bit field R_SETUP[3:0] in register SLC_TAC[3:0] for reads
[3] Rh = bit field R_HOLD[3:0] in register SLC_TAC[7:4] for reads
[4] Rw = bit field R_WIDTH[3:0] in register SLC_TAC[11:8] for reads
[5] Rb = bit field R_RDY[3:0] in register SLC_TAC[15:12] for reads
[6] Wsu = bit field W_SETUP[3:0] in register SLC_TAC[19:16] for writes
[7] Wh = bit field W_HOLD[3:0] in register SLC_TAC[23:20] for writes
[8] Ww = bit field W_WIDTH[3:0] in register SLC_TAC[27:24] for writes
[9] Wb = bit field W_RDY[3:0] in register SLC_TAC[31:28] for writes
t
WH
WE HIGH hold time write
[1][6][7]
-T
HCLK
 (Wsu + Wh) - ns
t
WHR
WE HIGH to RE LOW time write
[1][7][9]
-(T
HCLK
 Wh) + (2  T
HCLK
 Wb)
-ns
t
WP
WE pulse width write
[1][8]
-T
HCLK
 Ww - ns
t
REHRBL
RE HIGH to R/B LOW time write
[1][3][5]
-(T
HCLK
 Rh) + (2  T
HCLK

Rb)
-ns
Table 18. Dynamic characteristics of SLC NAND flash memory controller …continued
T
amb
=  40  C to +85  C.
Symbol Parameter Conditions Min Typ Max Unit
Fig 17. MLC NAND flash memory write timing (writing to NAND flash)
command
t
DS
t
DH
t
WB
FLASH_IO[7:0]
address
t
DS
t
DH
t
ALS
t
ALH
t
DS
t
DH
t
WP
t
WH
t
WC
t
CS
t
CH
t
CH
t
CLS
t
CLH
command address data
D0 D1 Dn
t
ALS
t
CLH
t
ALS
t
ALH
t
WP
t
WP
t
WH
t
CLS
t
CS
002aae444
FLASH_CE
FLASH_CLE
FLASH_WR
FLASH_ALE
FLASH_RDY