Datasheet

LPC435X_3X_2X_1X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 19 August 2014 94 of 158
NXP Semiconductors
LPC435x/3x/2x/1x
32-bit ARM Cortex-M4/M0 microcontroller
V
hys
hysteresis voltage 0.1 
V
DD(IO)
--V
I
pd
pull-down current V
I
=V
DD(IO)
[13]
[14]
[15]
-62-A
I
pu
pull-up current V
I
=0V
[13]
[14]
[15]
- 62 - A
V
DD(IO)
<V
I
 5V - 10 - A
I/O pins - high drive strength: standard drive mode
I
LH
HIGH-level leakage
current
V
I
=V
DD(IO)
; on-chip
pull-down resistor
disabled
-3-nA
V
I
=5 V; T
amb
= 25°C -0.6-nA
V
I
=5 V; T
amb
= 105 °C - 65 - nA
I
OH
HIGH-level output
current
V
OH
=V
DD(IO)
 0.4 V 4--mA
I
OL
LOW-level output
current
V
OL
=0.4V 4--mA
I
OHS
HIGH-level short-circuit
output current
drive HIGH; connected to
ground
[11]
--32mA
I
OLS
LOW-level short-circuit
output current
drive LOW; connected to
V
DD(IO)
[11]
--32mA
I/O pins - high drive strength: medium drive mode
I
LH
HIGH-level leakage
current
V
I
=V
DD(IO)
; on-chip
pull-down resistor
disabled
-3-nA
V
I
=5 V; T
amb
= 25°C -0.7-nA
V
I
=5 V; T
amb
= 105 °C - 70 - nA
I
OH
HIGH-level output
current
V
OH
=V
DD(IO)
 0.4 V 8--mA
I
OL
LOW-level output
current
V
OL
=0.4V 8--mA
I
OHS
HIGH-level short-circuit
output current
drive HIGH; connected to
ground
[11]
--65mA
I
OLS
LOW-level short-circuit
output current
drive LOW; connected to
V
DD(IO)
[11]
--63mA
I/O pins - high drive strength: high drive mode
I
LH
HIGH-level leakage
current
V
I
=V
DD(IO)
; on-chip
pull-down resistor
disabled
-3-nA
V
I
=5 V; T
amb
= 25°C -0.6-nA
V
I
=5 V; T
amb
= 105 °C - 63 - nA
I
OH
HIGH-level output
current
V
OH
=V
DD(IO)
 0.4 V 14--mA
Table 11. Static characteristics …continued
T
amb
=  40  C to +105  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit