Datasheet

LPC435X_3X_2X_1X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 19 August 2014 96 of 158
NXP Semiconductors
LPC435x/3x/2x/1x
32-bit ARM Cortex-M4/M0 microcontroller
V
OH
HIGH-level output
voltage
I
OH
= 8 mA V
DD(IO)

0.4
--V
V
OL
LOW-level output
voltage
I
OL
=8 mA --0.4V
I
OH
HIGH-level output
current
V
OH
=V
DD(IO)
 0.4 V 8--mA
I
OL
LOW-level output
current
V
OL
=0.4V 8--mA
I
OHS
HIGH-level short-circuit
output current
drive HIGH; connected to
ground
[11]
--86mA
I
OLS
LOW-level short-circuit
output current
drive LOW; connected to
V
DD(IO)
[11]
--76mA
I
pd
pull-down current V
I
=V
DD(IO)
[13]
[14]
[15]
-62-A
I
pu
pull-up current V
I
=0V
[13]
[14]
[15]
- 62 - A
V
DD(IO)
<V
I
 5V - 0 - A
Open-drain I
2
C0-bus pins
V
IH
HIGH-level input
voltage
0.7 
V
DD(IO)
--V
V
IL
LOW-level input voltage 0.5 0.14 0.3 
V
DD(IO)
V
V
hys
hysteresis voltage 0.1 
V
DD(IO)
--V
V
OL
LOW-level output
voltage
I
OLS
=3 mA --0.4V
I
LI
input leakage current V
I
=V
DD(IO)
[12]
-4.5-A
V
I
=5V --10A
Oscillator pins
V
i(XTAL1)
input voltage on pin
XTAL1
0.5 - 1.2 V
V
o(XTAL2)
output voltage on pin
XTAL2
0.5 - 1.2 V
C
io
input/output
capacitance
[16]
--0.8pF
USB0 pins
[17]
V
I
input voltage on pins USB0_DP;
USB0_DM; USB0_VBUS
V
DD(IO)
 2.2 V 0 - 5.25 V
V
DD(IO)
= 0 V 0 - 3.6 V
R
pd
pull-down resistance on pin USB0_VBUS 48 64 80 k
Table 11. Static characteristics
…continued
T
amb
=  40  C to +105  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit