Datasheet

LPC4350_30_20_10 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4.2 — 18 August 2014 89 of 155
NXP Semiconductors
LPC4350/30/20/10
32-bit ARM Cortex-M4/M0 microcontroller
I
BAT
battery supply current V
DD(REG)(3V3)
= 3.3 V;
V
BAT
= 3.6 V
deep-sleep mode
[8]
-2-A
power-down mode
[8]
-2-A
deep power-down
mode
[8]
-2-A
I
DD(IO)
I/O supply current deep sleep mode - - 1 - A
power-down mode - - 1 - A
deep power-down mode
[9]
-0.05-A
I
DDA
Analog supply current on pin VDDA;
deep sleep mode
[11]
-0.4-
A
power-down mode
[11]
-0.4-A
deep power-down
mode
[11]
-0.007-
A
RESET
,RTC_ALARM, WAKEUPn pins
V
IH
HIGH-level input
voltage
[10]
0.8  (V
ps

0.35)
-5.5V
V
IL
LOW-level input voltage
[10]
0 - 0.3  (V
ps

0.1)
V
V
hys
hysteresis voltage
[10]
0.05  (V
ps
 0.35)
--V
V
o
output voltage
[10]
-V
ps
- 0.2 - V
Standard I/O pins - normal drive strength
C
I
input capacitance - - 2 pF
I
LL
LOW-level leakage
current
V
I
= 0 V; on-chip pull-up
resistor disabled
-3-nA
I
LH
HIGH-level leakage
current
V
I
=V
DD(IO)
; on-chip
pull-down resistor
disabled
-3-nA
V
I
=5 V --20nA
I
OZ
OFF-state output
current
V
O
=0V to V
DD(IO)
;
on-chip pull-up/down
resistors disabled;
absolute value
-3-nA
V
I
input voltage pin configured to provide
a digital function;
V
DD(IO)
 2.2 V
0- 5.5V
V
DD(IO)
= 0 V 0 - 3.6 V
V
O
output voltage output active 0 - V
DD(IO)
V
V
IH
HIGH-level input
voltage
0.7 
V
DD(IO)
-5.5V
V
IL
LOW-level input voltage 0 - 0.3 
V
DD(IO)
V
V
hys
hysteresis voltage 0.1 
V
DD(IO)
--V
Table 10. Static characteristics
…continued
T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit