Datasheet

LPC4370 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 21 October 2013 93 of 150
NXP Semiconductors
LPC4370
32-bit ARM Cortex-M4/M0 microcontroller
[1] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
[2] Dynamic characteristics for peripherals are provided for V
DD(REG)(3V)
 2.7 V.
[3] Pin VPP should either be not connected (when OTP does not need to be programmed) or tied to pins VDDIO and VDDREG to ensure
the same ramp-up time for both supply voltages.
[4] V
DD(REG)(3V3)
= 3.3 V; V
DD(IO)
= 3.3 V; T
amb
=25C.
[5] PLL1 disabled; IRC running; CCLK = 12 MHz.
[6] V
BAT
= 3.6 V.
[7] V
DD(IO)
= V
DDA
= 3.6 V; over entire frequency range CCLK = 12 MHz to 180 MHz.
[8] On pin VBAT; T
amb
=25C.
[9] V
DD(REG)(3V3)
= 3.3 V; V
DD(IO)
= 3.3 V. Input leakage increases when V
DD(IO)
is floating or grounded. It is recommended to keep
V
DD(REG)(3V3)
and V
DD(IO)
powered in deep power-down mode.
[10] V
ps
corresponds to the output of the power switch (see Figure 7) which is determined by the greater of V
BAT
and V
DD(Reg)(3V3)
.
[11] V
DDA(3V3)
= 3.3 V; T
amb
=25C.
[12] Allowed as long as the current limit does not exceed the maximum current allowed by the device.
[13] To V
SS
.
[14] The values specified are simulated and absolute values.
[15] The weak pull-up resistor is connected to the V
DD(IO)
rail and pulls up the I/O pin to the V
DD(IO)
level.
[16] The input cell disables the weak pull-up resistor when the applied input voltage exceeds V
DD(IO)
.
[17] The parameter value specified is a simulated value excluding bond capacitance.
[18] For USB operation 3.0 V  V
DD((IO)
 3.6 V. Guaranteed by design.
[19] V
DD(IO)
present.
[20] Includes external resistors of 33 1 % on D+ and D.
V
OH
HIGH-level output
voltage (driven) for
low-/full-speed
R
L
of 15 k to GND 2.8 - 3.5 V
C
trans
transceiver capacitance pin to GND - - 20 pF
Z
DRV
driver output
impedance for driver
which is not high-speed
capable
with 33  series resistor;
steady state drive
[20]
36 - 44.1 
Table 10. Static characteristics
…continued
T
amb
=  40  C to +85  C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit