Datasheet

LPC81XM All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4.3 — 22 April 2014 46 of 76
NXP Semiconductors
LPC81xM
32-bit ARM Cortex-M0+ microcontroller
12. Dynamic characteristics
12.1 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 64 bytes to the flash. T
amb
 +85 C. Flash programming with IAP
calls (see LPC800 user manual).
12.2 External clock for the oscillator in slave mode
Remark: The input voltage on the XTAL1/2 pins must be  1.95 V (see Table 9). For
connecting the oscillator to the XTAL pins, also see Section 14.2
.
[1] Parameters are valid over operating temperature range unless otherwise specified.
[2] Typical ratings are not guaranteed. The values listed are for room temperature (25 C), nominal supply
voltages.
Table 11. Flash characteristics
T
amb
=  40  C to +105  C. Based on JEDEC NVM qualification. Failure rate < 10 ppm for parts as
specified below.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered 10 20 - years
unpowered 20 40 - years
t
er
erase time page or multiple
consecutive pages,
sector or multiple
consecutive
sectors
95 100 105 ms
t
prog
programming
time
[2]
0.95 1 1.05 ms
Table 12. Dynamic characteristic: external clock (XTALIN inputs)
T
amb
=  40  C to +105  C; V
DD
over specified ranges.
[1]
Symbol Parameter Conditions Min Typ
[2]
Max Unit
f
osc
oscillator frequency 1 - 25 MHz
T
cy(clk)
clock cycle time 40 - 1000 ns
t
CHCX
clock HIGH time T
cy(clk)
 0.4 - - ns
t
CLCX
clock LOW time T
cy(clk)
 0.4 - - ns
t
CLCH
clock rise time - - 5 ns
t
CHCL
clock fall time - - 5 ns
Fig 28. External clock timing (with an amplitude of at least V
i(RMS)
= 200 mV)
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