Datasheet

LPC81XM All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4.3 — 22 April 2014 54 of 76
NXP Semiconductors
LPC81xM
32-bit ARM Cortex-M0+ microcontroller
13. Analog characteristics
13.1 BOD
[1] Interrupt levels are selected by writing the level value to the BOD control register BODCTRL.
[2] Typical ratings are not guaranteed. The values listed are for room temperature (25 C), V
DD
= 3.3 V, typical
samples.
13.2 Internal voltage reference
[1] Characterized through simulation.
[2] Characterized on a typical silicon sample.
Table 19. BOD static characteristics
[1]
T
amb
=  40  C to +105  C.
Symbol Parameter Conditions Typ
[2]
Unit
V
th
threshold voltage interrupt level 1
assertion 2.3 V
de-assertion 2.4 V
interrupt level 2
assertion 2.6 V
de-assertion 2.7 V
interrupt level 3
assertion 2.8 V
de-assertion 2.9 V
reset level 1
assertion 2.1 V
de-assertion 2.2 V
reset level 2
assertion 2.4 V
de-assertion 2.5 V
reset level 3
assertion 2.6 V
de-assertion 2.8 V
Table 20. Internal voltage reference static and dynamic characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
O
output voltage T
amb
= 40 C to +105 C
[1]
0.855 0.900 0.945 V
T
amb
= 70 C to 105 C
[2]
- 0.906 - V
T
amb
= 50 C
[2]
- 0.905 - V
T
amb
= 25 C
[4]
0.893 0.903 0.913 V
T
amb
= 0 C
[2]
- 0.902 - V
T
amb
= 20 C
[2]
- 0.899 - V
T
amb
= 40 C
[2]
- 0.896 - V
t
s(pu)
power-up
settling time
to 99% of V
O
[3]
- 155 195 s