Datasheet

DRAFT DRAFT DRAFT DR DRAFT DRAFT DRAFT
D
RAF
DRAFT DRAFT DRA
F
T D
RAFT DR
AFT D
DRA
F
T DRAFT DRAFT
D
RAFT
DRAFT
D
RAFT
DRA
LPC82x All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 0.11 — 26 August 2014 64 of 81
NXP Semiconductors
LPC82x
32-bit ARM Cortex-M0+ microcontroller
13.3 Comparator and internal voltage reference
Table 23. Internal voltage reference static and dynamic characteristics
T
amb
=  40  C to +105  C; V
DD
= 3.3 V; hysteresis disabled in the comparator CTRL register.
Symbol Parameter Conditions Min Typ Max Unit
V
O
output voltage T
amb
= 25 C to 105C 860 - 940 mV
T
amb
= 25 C 904 mV
t
s(pu)
power-up
settling time
to 99% of V
O
- - <tbd> s
V
DD
= 3.3 V; characterized through bench measurements on typical samples.
Fig 39. Typical internal voltage reference output voltage
aaa-014424
-40 -10 20 50 80 110
0.890
0.895
0.900
0.905
0.910
temperature (°C)
V
ref
ref
V
O
(mV)
(mV)
(V)
Table 24. Comparator characteristics
T
amb
=  40  C to +105  C unless noted otherwise; V
DD
= 1.8 V to 3.6 V.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
ref(cmp)
comparator reference
voltage
pin PIO0_6/VDDCMP configured for
function VDDCMP
1.5 - 3.6 V
I
DD
supply current VP > VM; T
amb
= 25 °C; V
DD
= 3.3 V
[2]
-90 - A
VM > VP; T
amb
= 25 °C; V
DD
= 3.3 V
[2]
-60 - A
V
IC
common-mode input voltage 0 - V
DD
V
DV
O
output voltage variation 0 - V
DD
V
V
offset
offset voltage V
IC
= 0.1 V; V
DD
= 2.4 V; T
amb
= 105 °C
[2]
-+/- 4- mV
V
IC
= 1.5 V; V
DD
= 2.4 V; T
amb
= 105 °C
[2]
-+/- 2- mV
V
IC
= 2.9 V; V
DD
= 2.4 V; T
amb
= 105 °C
[2]
-+/- 4- mV
Dynamic characteristics
t
startup
start-up time nominal process; V
DD
= 3.3 V; T
amb
=
25
°C
-13 - s