Datasheet

Flash Memory Characteristics
56F8014 Technical Data, Rev. 11
Freescale Semiconductor 99
Figure 10-2 Input Signal Measurement References
Figure 10-3 shows the definitions of the following signal states:
• Active state, when a bus or signal is driven, and enters a low impedance state
• Tri-stated, when a bus or signal is placed in a high impedance state
• Data Valid state, when a signal level has reached V
OL
or V
OH
• Data Invalid state, when a signal level is in transition between V
OL
and V
OH
Figure 10-3 Signal States
10.4 Flash Memory Characteristics
Table 10-9 Flash Timing Parameters
Characteristic Symbol Min Typ Max Unit
Program time
1
1. There is additional overhead which is part of the programming sequence. See the 56F801X Peripheral Reference
Manual for details.
Tprog
20 — 40 μs
Erase time
2
2. Specifies page erase time. There are 512 bytes per page in the Program Flash memory.
Terase
20 — — ms
Mass erase time
Tme
100 — — ms
V
IH
V
IL
Fall Time
Input Signal
Note: The midpoint is V
IL
+ (V
IH
– V
IL
)/2.
Midpoint1
Low High
90%
50%
10%
Rise Time
Data Invalid State
Data1
Data2 Valid
Data
Tri-stated
Data3 Valid
Data2 Data3
Data1 Valid
Data Active Data Active