Datasheet

56F8355 Technical Data, Rev. 17
152 Freescale Semiconductor
Preliminary
Conversion time t
ADC
—6
t
AIC
cycles
3
Sample time t
ADS
—1
t
AIC
cycles
3
Input capacitance C
ADI
—5 pF
Input injection current
5
, per pin
I
ADI
—— 3mA
Input injection current, total I
ADIT
—— 20mA
V
REFH
current I
VREFH
—1.2 3mA
ADC A current I
ADCA
—25 mA
ADC B current I
ADCB
—25 mA
Quiescent current I
ADCQ
—0 10μA
Uncalibrated Gain Error (ideal = 1) E
GAIN
+/- .004 +/- .015
Uncalibrated Offset Voltage V
OFFSET
+/- 15 +/- 35 mV
Calibrated Absolute Error
6
AE
CAL
See Figure 10-22 LSBs
Calibration Factor 1
7
CF1 TBD 0.010380
Calibration Factor 2
7
CF2 TBD -31.7
Crosstalk between channels -60 dB
Common Mode Voltage V
common
—(V
REFH
- V
REFLO
) / 2 V
Signal-to-noise ratio SNR 64.6 db
Signal-to-noise plus distortion ratio SINAD 59.1 db
Total Harmonic Distortion THD 60.6 db
Spurious Free Dynamic Range SFDR 61.1 db
Effective Number Of Bits
8
ENOB 9.6 Bits
Non-averaged DC drift of error over
temperature from 27° C
9
——
3LSB
1. INL measured from V
in
= .1V
REFH
to V
in
= .9V
REFH
10% to 90% Input Signal Range
2. LSB = Least Significant Bit
3. ADC clock cycles
4. Assumes each voltage reference pin is bypassed with 0.1μF ceramic capacitors to ground
5. The current that can be injected or sourced from an unselected ADC signal input without impacting the performance of
the ADC. This allows the ADC to operate in noisy industrial environments where inductive flyback is possible.
6. Absolute error includes the effects of both gain error and offset error.
7. Please see the 56F8300 Peripheral User’s Manual for additional information on ADC calibration.
8. ENOB = (SINAD - 1.76)/6.02
9. Temperature range –40° C to 150° C
Table 10-23 ADC Parameters (Continued)
Characteristic Symbol Min Typ Max Unit