Datasheet

MPC7447A RISC Microprocessor Hardware Specifications, Rev. 5
Freescale Semiconductor 9
General Parameters
4 General Parameters
The following list is a summary of the general parameters of the MPC7447A:
Technology 0.13-μm CMOS, nine-layer metal
Die size 8.51 mm × 9.86 mm
Transistor count 48.6 million
Logic design Fully-static
Packages Surface mount 360 ceramic ball grid array (HCTE)
Surface mount RoHS-compliant 360 ceramic ball grid array (HCTE)
Surface mount 360 ceramic land grid array (HCTE)
Core power supply 1.3 V ± 50 mV DC (nominal), or
1.2 V ± 50 mV DC (derated)
I/O power supply 1.8 V ± 5% DC, or
2.5 V ± 5% DC
5 Electrical and Thermal Characteristics
This section provides the AC and DC electrical specifications and thermal characteristics for the
MPC7447A.
5.1 DC Electrical Characteristics
The tables in this section describe the MPC7447A DC electrical characteristics. Table 2 provides the
absolute maximum ratings.
Number of 32-byte sectors/line 2
Parity Byte
Thermal Control
Dynamic frequency switching (DFS) Yes No No No
Thermal diode Yes No No No
Table 2. Absolute Maximum Ratings
1
Characteristic Symbol Maximum Value Unit Notes
Core supply voltage V
DD
–0.3 to 1.60 V 2
PLL supply voltage AV
DD
–0.3 to 1.60 V 2
Processor bus supply voltage BVSEL = 0 OV
DD
–0.3 to 1.95 V 3, 4
BVSEL = HRESET
or OV
DD
OV
DD
–0.3 to 2.7 V 3, 5
Input voltage Processor bus V
in
–0.3 to OV
DD
+ 0.3 V 6, 7
JTAG signals V
in
–0.3 to OV
DD
+ 0.3 V —
Table 1. Microarchitecture Comparison (continued)
Microarchitectural Specs MPC7447A MPC7447 MPC7445 MPC7441