Datasheet

DC Electrical Characteristics
MC68HC812A4 Data Sheet, Rev. 7
Freescale Semiconductor 223
18.4 DC Electrical Characteristics
Characteristic
(1)
1. V
DD
= 5.0 Vdc ± 10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
Symbol Min Max Unit
Input high voltage, all inputs
V
IH
0.7 × V
DD
V
DD
+ 0.3
V
Input low voltage, all inputs
V
IL
V
SS
0.3 0.2 × V
DD
V
Output high voltage, all I/O and output pins
Normal drive strength
I
OH
= 10.0 µA
I
OH
= 0.8 mA
Reduced drive strength
I
OH
= 4.0 µA
I
OH
= 0.3 mA
V
OH
V
DD
0.2
V
DD
0.8
V
DD
0.2
V
DD
0.8
V
Output low voltage, all I/O and output pins, normal drive strength
I
OL
= 10.0 µA
I
OL
= 1.6 mA
EXTAL, PAD[7:0], V
RH
, V
RL
, V
FP
, XIRQ, reduced drive strength
I
OL
= 3.6 µA
I
OL
= 0.6 mA
V
OL
V
SS
+0.2
V
SS
+0.4
V
SS
+0.2
V
SS
+0.4
V
Input leakage current
(2)
all input pins
V
In
= V
DD
or V
SS
— V
RL
, V
RH
, PAD6–PAD0
V
In
= V
DD
or V
SS
— IRQ
V
In
= V
DD
or V
SS
— PAD7
2. Specification is for parts in the –40 to +85°C range. Higher temperature ranges will result in increased current leakage.
I
In
±1
±10
±10
µA
Three-state leakage, I/O ports, BKGD, and RESET
I
OZ
±2.5 µA
Input capacitance
All input pins and ATD pins (non-sampling)
ATD pins (sampling)
All I/O pins
C
In
10
15
20
pF
Output load capacitance
All outputs except PS7–PS4
PS7–PS4
C
L
90
200
pF
Active pullup, pulldown current
IRQ
, XIRQ, DBE, ECLK, LSTRB, R/W, and BKGD
Ports A, B, C, D, F, G, H, J, P, S, and T
I
APU
50 500 µA
RAM standby voltage, power down
V
SB
1.5 V
RAM standby current
I
SB
—10µA