Datasheet

Electrical Specifications
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
374 Freescale Semiconductor
28.1.11 Timer Module Characteristics
28.1.12 RAM Memory Characteristics
28.1.13 EEPROM Memory Characteristics
Characteristic Symbol Min Max Unit
Input Capture Pulse Width
t
TIH,
t
TIL
125 — ns
Input Clock Pulse Width
t
TCH,
t
TCL
(1/f
OP
) + 5
—ns
Characteristic Symbol Min Max Unit
RAM Data Retention Voltage
V
RDR
0.7 — V
Characteristic Symbol Min Max Unit
EEPROM Programming Time per Byte
t
EEPGM
10 — ms
EEPROM Erasing Time per Byte
t
EEBYTE
10 — ms
EEPROM Erasing Time per Block
t
EEBLOCK
10 — ms
EEPROM Erasing Time per Bulk
t
EEBULK
10 — ms
EEPROM Programming Voltage Discharge Period
t
EEFPV
100 — μs
Number of Programming Operations to the Same EEPROM Byte
Before Erase
(1)
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must be erased before it can
be programmed again.
——8—
EEPROM Write/Erase Cycles @ 10 ms Write Time — 10,000 — Cycles
EEPROM Data Retention After 10,000 Write/Erase Cycles — 10 — Years
EEPROM Programming Maximum Time to ‘AUTO’ Bit Set — — 500 μs
EEPROM Erasing Maximum Time to ‘AUTO’ Bit Set — — 8 ms