Datasheet

Electrical Specifications
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
Freescale Semiconductor 375
28.1.14 FLASH Memory Characteristics
Characteristic Symbol Min Max Unit
FLASH Program Bus Clock Frequency — 1 — MHz
FLASH Read Bus Clock Frequency
f
READ
(1)
1. f
READ
is defined as the frequency range for which the FLASH memory can be read.
32K 8.4M Hz
FLASH Page Erase Time
t
ERASE
(2)
2. If the page erase time is longer than t
ERASE
(MIN), there is no erase-disturb, but it reduces the endurance of the FLASH memory.
1—ms
FLASH Mass Erase Time
t
MERASE
(3)
3. If the mass erase time is longer than t
MERASE
(MIN), there is no erase-disturb, but it reduces the endurance of the FLASH memory.
4—ms
FLASH PGM/ERASE to HVEN Set Up Time
t
NVS
10 — μs
FLASH High Voltage Hold Time
t
NVH
5—μs
FLASH High Voltage Hold Time (Mass)
t
NVHL
100 — μs
FLASH Program Hold Time
t
PGS
5—μs
FLASH Program Time
t
PROG
30 40 μs
FLASH Return to Read Time
t
RCV
(4)
4. t
RCV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump by clearing HVEN to logic 0.
1 μs
FLASH Cumulative Program HV Period
t
HV
(5)
5. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
t
HV
must satisfy this condition:
t
NVS
+ t
NVH
+ t
PGS
+ (t
PROG
X 64) ≥ t
HV
max.
—4ms
FLASH Row Erase Endurance
(6)
6. The minimum row erase endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many erase cycles.
10,000 — cycles
FLASH Row Program Endurance
(7)
7. The minimum row program endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many program
cycles.
10,000 — cycles
FLASH Data Retention Time
(8)
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time specified.
10 — years