Datasheet

Memory Characteristics
MC68HC908GP32 Data Sheet, Rev. 10
Freescale Semiconductor 253
19.16.2 CGM Electrical Specifications
19.17 Memory Characteristics
Description Symbol Min Typ Max Unit
Operating voltage
V
DD
2.7 — 5.5 V
Operating temperature T –40 25 85 °C
Reference frequency
f
RDV
30 32.768 100 kHz
Range nominal multiplier
f
NOM
— 38.4 — kHz
VCO center-of-range frequency
(1)
1. 5.0 V ± 10% V
DD
f
VRS
38.4 k — 40.0 M Hz
Medium-voltage VCO center-of-range frequency
(2)
2. 3.0 V ± 10% V
DD
f
VRS
38.4 k — 40.0 M Hz
VCO range linear range multiplier L 1 — 255
VCO power-of-two range multiplier
2
E
1—4
VCO multiply factor N 1 — 4095
VCO prescale multiplier
2
P
118
Reference divider factor R 1 1 15
VCO operating frequency
f
VCLK
38.4 k — 40.0 M Hz
Bus operating frequency
(1)
f
BUS
— — 8.2 MHz
Bus frequency @ medium voltage
(2)
f
BUS
— — 4.1 MHz
Manual acquisition time
t
Lock
— — 50 ms
Automatic lock time
t
Lock
— — 50 ms
PLL jitter
(3)
3. Deviation of average bus frequency over 2 ms. N = VCO multiplier.
f
J
0—
f
RCLK
×
0.025%
× 2
P
N/4
Hz
External clock input frequency
PLL disabled
f
OSC
dc — 32.8 M Hz
External clock input frequency
PLL enabled
f
OSC
30 k — 1.5 M Hz
Notes:
Characteristic Symbol Min Typ Max Unit
RAM data retention voltage V
RDR
1.3 — — V
FLASH program bus clock frequency — 1 — — MHz
FLASH read bus clock frequency f
Read
(1)
8 k — 8.4 M Hz
FLASH page erase time
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
t
Erase
0.9
3.6
1
4
1.1
5.5
ms
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