Datasheet

Electrical Specifications
MC68HC908GP32 Data Sheet, Rev. 10
254 Freescale Semiconductor
FLASH mass erase time t
MErase
4——ms
FLASH PGM/ERASE to HVEN setup time t
NVS
10 — — µs
FLASH high-voltage hold time t
NVH
5——µs
FLASH high-voltage hold time (mass erase) t
NVHL
100 — — µs
FLASH program hold time t
PGS
5——µs
FLASH program time t
PROG
30 — 40 µs
FLASH return to read time t
RCV
(2)
1——µs
FLASH cumulative program hv period t
HV
(3)
—— 4ms
FLASH endurance
(4)
— 10 k 100 k — Cycles
FLASH data retention time
(5)
— 15 100 — Years
1. f
Read
is defined as the frequency range for which the FLASH memory can be read.
2. t
RCV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
clearing HVEN to 0.
3. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
t
HV
must satisfy this condition: t
NVS
+ t
NVH
+ t
PGS
+ (t
PROG
x 64) ≤ t
HV
maximum.
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
Endurance, please refer to Engineering Bulletin EB619.
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25 Cusing the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Characteristic Symbol Min Typ Max Unit