Datasheet

Memory
MC68HC908GP32 Data Sheet, Rev. 10
42 Freescale Semiconductor
PGM bit (step 7 to step 10) must not exceed the maximum programming
time, t
PROG
maximum.
NOTE
Be cautious when programming the FLASH array to ensure that
non-FLASH locations are not used as the address that is written to when
selecting either the desired row address range in step 3 of the algorithm or
the byte to be programmed in step 7 of the algorithm. This applies
particularly to $FFD4–$FFDF.
2.6.6 FLASH Block Protection
Due to the ability of the on-board charge pump to erase and program the FLASH memory in the target
application, provision is made for protecting a block of memory from unintentional erase or program
operations due to system malfunction. This protection is done by using of a FLASH Block Protect Register
(FLBPR). The FLBPR determines the range of the FLASH memory which is to be protected. The range
of the protected area starts from a location defined by FLBPR and ends at the bottom of the FLASH
memory ($FFFF). When the memory is protected, the HVEN bit cannot be set in either ERASE or
PROGRAM operations.
NOTE
In performing a program or erase operation, the FLASH block protect
register must be read after setting the PGM or ERASE bit and before
asserting the HVEN bit