Datasheet
Table Of Contents
- Revision History
- List of Chapters
- Table of Contents
- Chapter 1 General Description
- 1.1 Introduction
- 1.2 Features
- 1.3 MCU Block Diagram
- 1.4 Pin Assignments
- 1.5 Pin Functions
- 1.5.1 Power Supply Pins (VDD and VSS)
- 1.5.2 Oscillator Pins (OSC1 and OSC2)
- 1.5.3 External Reset Pin (RST)
- 1.5.4 External Interrupt Pin (IRQ)
- 1.5.5 CGM Power Supply Pins (VDDA and VSSA)
- 1.5.6 External Filter Capacitor Pin (CGMXFC)
- 1.5.7 ADC Power Supply/Reference Pins (VDDAD/VREFH and VSSAD/VREFL)
- 1.5.8 Port A Input/Output (I/O) Pins (PTA7/KBD7/AD15-PTA0/KBD0/AD8)
- 1.5.9 Port B I/O Pins (PTB7/AD7-PTB0/AD0)
- 1.5.10 Port C I/O Pins (PTC6-PTC0)
- 1.5.11 Port D I/O Pins (PTD7/T2CH1-PTD0/SS)
- 1.5.12 Port E I/O Pins (PTE5-PTE2, PTE1/RxD, and PTE0/TxD)
- 1.5.13 Port F I/O Pins (PTF7/T2CH5-PTF0)
- 1.5.14 Port G I/O Pins (PTG7/AD23-PTBG0/AD16)
- 1.5.15 Unused Pin Termination
- Chapter 2 Memory
- 2.1 Introduction
- 2.2 Unimplemented Memory Locations
- 2.3 Reserved Memory Locations
- 2.4 Input/Output (I/O) Section
- 2.5 Random-Access Memory (RAM)
- 2.6 FLASH-1 Memory (FLASH-1)
- 2.7 FLASH-2 Memory (FLASH-2)
- Chapter 3 Analog-to-Digital Converter (ADC)
- Chapter 4 Clock Generator Module (CGM)
- 4.1 Introduction
- 4.2 Features
- 4.3 Functional Description
- 4.4 I/O Signals
- 4.4.1 Crystal Amplifier Input Pin (OSC1)
- 4.4.2 Crystal Amplifier Output Pin (OSC2)
- 4.4.3 External Filter Capacitor Pin (CGMXFC)
- 4.4.4 PLL Analog Power Pin (Vdda)
- 4.4.5 PLL Analog Ground Pin (Vssa)
- 4.4.6 Oscillator Enable Signal (SIMOSCEN)
- 4.4.7 Oscillator Enable in Stop Mode Bit (OSCENINSTOP)
- 4.4.8 Crystal Output Frequency Signal (CGMXCLK)
- 4.4.9 CGM Base Clock Output (CGMOUT)
- 4.4.10 CGM CPU Interrupt (CGMINT)
- 4.5 CGM Registers
- 4.6 Interrupts
- 4.7 Special Modes
- 4.8 Acquisition/Lock Time Specifications
- Chapter 5 Configuration Register (CONFIG)
- Chapter 6 Computer Operating Properly (COP) Module
- Chapter 7 Central Processor Unit (CPU)
- Chapter 8 External Interrupt (IRQ)
- Chapter 9 Keyboard Interrupt Module (KBI)
- Chapter 10 Low-Power Modes
- 10.1 Introduction
- 10.2 Analog-to-Digital Converter (ADC)
- 10.3 Break Module (BRK)
- 10.4 Central Processor Unit (CPU)
- 10.5 Clock Generator Module (CGM)
- 10.6 Computer Operating Properly Module (COP)
- 10.7 External Interrupt Module (IRQ)
- 10.8 Keyboard Interrupt Module (KBI)
- 10.9 Low-Voltage Inhibit Module (LVI)
- 10.10 Enhanced Serial Communications Interface Module (ESCI)
- 10.11 Serial Peripheral Interface Module (SPI)
- 10.12 Timer Interface Module (TIM1 and TIM2)
- 10.13 Timebase Module (TBM)
- 10.14 Exiting Wait Mode
- 10.15 Exiting Stop Mode
- Chapter 11 Low-Voltage Inhibit (LVI)
- Chapter 12 Input/Output (I/O) Ports
- Chapter 13 Enhanced Serial Communications Interface (ESCI) Module
- Chapter 14 System Integration Module (SIM)
- Chapter 15 Serial Peripheral Interface (SPI) Module
- Chapter 16 Timebase Module (TBM)
- Chapter 17 Timer Interface Module (TIM1)
- Chapter 18 Timer Interface Module (TIM2)
- Chapter 19 Development Support
- Chapter 20 Electrical Specifications
- 20.1 Introduction
- 20.2 Absolute Maximum Ratings
- 20.3 Functional Operating Range
- 20.4 Thermal Characteristics
- 20.5 5.0-Vdc Electrical Characteristics
- 20.6 3.3-Vdc Electrical Characteristics
- 20.7 5.0-Volt Control Timing
- 20.8 3.3-Volt Control Timing
- 20.9 Clock Generation Module (CGM) Characteristics
- 20.10 5.0-Volt ADC Characteristics
- 20.11 3.3-Volt ADC Characteristics
- 20.12 5.0-Volt SPI Characteristics
- 20.13 3.3-Volt SPI Characteristics
- 20.14 Timer Interface Module Characteristics
- 20.15 Memory Characteristics
- Chapter 21 Ordering Information and Mechanical Specifications
- Appendix A MC68HC908GR48A
- Appendix B MC68HC908GR32A
Memory
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
46 Freescale Semiconductor
2.6.5 FLASH-1 Page Erase Operation
Use this step-by-step procedure to erase a page (128 bytes) of FLASH-1 memory:
1. Set the ERASE bit and clear the MASS bit in the FLASH-1 control register (FL1CR).
2. Read the FLASH-1 block protect register (FL1BPR).
3. Write any data to any FLASH-1 address within the address range of the page (128 byte block) to
be erased.
4. Wait for time, t
NVS
(minimum 10 μs).
5. Set the HVEN bit.
6. Wait for time, t
ERASE
(minimum 1 ms or 4 ms).
7. Clear the ERASE bit.
8. Wait for time, t
NVH
(minimum 5 μs).
9. Clear the HVEN bit.
10. Wait for a time, t
RCV
, (typically 1 μs) after which the memory can be accessed in normal read mode.
NOTE
A. Programming and erasing of FLASH locations can not be performed by code being executed from the
same FLASH array.
B. While these operations must be performed in the order shown, other unrelated operations may occur
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
C. It is highly recommended that interrupts be disabled during program/erase operations.
In applications that require more than 1000 program/erase cycles, use the 4 ms page erase specification
to get improved long-term reliability. Any application can use this 4 ms page erase specification. However,
in applications where a FLASH location will be erased and reprogrammed less than 1000 times, and
speed is important, use the 1 ms page erase specification to get a shorter cycle time.
