Datasheet
Table Of Contents
- Revision History
- List of Chapters
- Table of Contents
- Chapter 1 General Description
- 1.1 Introduction
- 1.2 Features
- 1.3 MCU Block Diagram
- 1.4 Pin Assignments
- 1.5 Pin Functions
- 1.5.1 Power Supply Pins (VDD and VSS)
- 1.5.2 Oscillator Pins (OSC1 and OSC2)
- 1.5.3 External Reset Pin (RST)
- 1.5.4 External Interrupt Pin (IRQ)
- 1.5.5 CGM Power Supply Pins (VDDA and VSSA)
- 1.5.6 External Filter Capacitor Pin (CGMXFC)
- 1.5.7 ADC Power Supply/Reference Pins (VDDAD/VREFH and VSSAD/VREFL)
- 1.5.8 Port A Input/Output (I/O) Pins (PTA7/KBD7/AD15-PTA0/KBD0/AD8)
- 1.5.9 Port B I/O Pins (PTB7/AD7-PTB0/AD0)
- 1.5.10 Port C I/O Pins (PTC6-PTC0)
- 1.5.11 Port D I/O Pins (PTD7/T2CH1-PTD0/SS)
- 1.5.12 Port E I/O Pins (PTE5-PTE2, PTE1/RxD, and PTE0/TxD)
- 1.5.13 Port F I/O Pins (PTF7/T2CH5-PTF0)
- 1.5.14 Port G I/O Pins (PTG7/AD23-PTBG0/AD16)
- 1.5.15 Unused Pin Termination
- Chapter 2 Memory
- 2.1 Introduction
- 2.2 Unimplemented Memory Locations
- 2.3 Reserved Memory Locations
- 2.4 Input/Output (I/O) Section
- 2.5 Random-Access Memory (RAM)
- 2.6 FLASH-1 Memory (FLASH-1)
- 2.7 FLASH-2 Memory (FLASH-2)
- Chapter 3 Analog-to-Digital Converter (ADC)
- Chapter 4 Clock Generator Module (CGM)
- 4.1 Introduction
- 4.2 Features
- 4.3 Functional Description
- 4.4 I/O Signals
- 4.4.1 Crystal Amplifier Input Pin (OSC1)
- 4.4.2 Crystal Amplifier Output Pin (OSC2)
- 4.4.3 External Filter Capacitor Pin (CGMXFC)
- 4.4.4 PLL Analog Power Pin (Vdda)
- 4.4.5 PLL Analog Ground Pin (Vssa)
- 4.4.6 Oscillator Enable Signal (SIMOSCEN)
- 4.4.7 Oscillator Enable in Stop Mode Bit (OSCENINSTOP)
- 4.4.8 Crystal Output Frequency Signal (CGMXCLK)
- 4.4.9 CGM Base Clock Output (CGMOUT)
- 4.4.10 CGM CPU Interrupt (CGMINT)
- 4.5 CGM Registers
- 4.6 Interrupts
- 4.7 Special Modes
- 4.8 Acquisition/Lock Time Specifications
- Chapter 5 Configuration Register (CONFIG)
- Chapter 6 Computer Operating Properly (COP) Module
- Chapter 7 Central Processor Unit (CPU)
- Chapter 8 External Interrupt (IRQ)
- Chapter 9 Keyboard Interrupt Module (KBI)
- Chapter 10 Low-Power Modes
- 10.1 Introduction
- 10.2 Analog-to-Digital Converter (ADC)
- 10.3 Break Module (BRK)
- 10.4 Central Processor Unit (CPU)
- 10.5 Clock Generator Module (CGM)
- 10.6 Computer Operating Properly Module (COP)
- 10.7 External Interrupt Module (IRQ)
- 10.8 Keyboard Interrupt Module (KBI)
- 10.9 Low-Voltage Inhibit Module (LVI)
- 10.10 Enhanced Serial Communications Interface Module (ESCI)
- 10.11 Serial Peripheral Interface Module (SPI)
- 10.12 Timer Interface Module (TIM1 and TIM2)
- 10.13 Timebase Module (TBM)
- 10.14 Exiting Wait Mode
- 10.15 Exiting Stop Mode
- Chapter 11 Low-Voltage Inhibit (LVI)
- Chapter 12 Input/Output (I/O) Ports
- Chapter 13 Enhanced Serial Communications Interface (ESCI) Module
- Chapter 14 System Integration Module (SIM)
- Chapter 15 Serial Peripheral Interface (SPI) Module
- Chapter 16 Timebase Module (TBM)
- Chapter 17 Timer Interface Module (TIM1)
- Chapter 18 Timer Interface Module (TIM2)
- Chapter 19 Development Support
- Chapter 20 Electrical Specifications
- 20.1 Introduction
- 20.2 Absolute Maximum Ratings
- 20.3 Functional Operating Range
- 20.4 Thermal Characteristics
- 20.5 5.0-Vdc Electrical Characteristics
- 20.6 3.3-Vdc Electrical Characteristics
- 20.7 5.0-Volt Control Timing
- 20.8 3.3-Volt Control Timing
- 20.9 Clock Generation Module (CGM) Characteristics
- 20.10 5.0-Volt ADC Characteristics
- 20.11 3.3-Volt ADC Characteristics
- 20.12 5.0-Volt SPI Characteristics
- 20.13 3.3-Volt SPI Characteristics
- 20.14 Timer Interface Module Characteristics
- 20.15 Memory Characteristics
- Chapter 21 Ordering Information and Mechanical Specifications
- Appendix A MC68HC908GR48A
- Appendix B MC68HC908GR32A
FLASH-1 Memory (FLASH-1)
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
Freescale Semiconductor 47
2.6.6 FLASH-1 Program Operation
Programming of the FLASH-1 memory is done on a row basis. A row consists of 64 consecutive bytes
with address ranges as follows:
• $XX00 to $XX3F
• $XX40 to $XX7F
• $XX80 to $XXBF
• $XXC0 to $XXFF
During the programming cycle, make sure that all addresses being written to fit within one of the ranges
specified above. Attempts to program addresses in different row ranges in one programming cycle will fail.
Use this step-by-step procedure to program a row of FLASH-1 memory.
NOTE
Only bytes which are currently $FF may be programmed.
1. Set the PGM bit in the FLASH-1 control register (FL1CR). This configures the memory for program
operation and enables the latching of address and data programming.
2. Read the FLASH-1 block protect register (FL1BPR).
3. Write to any FLASH-1 address within the row address range desired with any data.
4. Wait for time, t
NVS
(minimum 10 μs).
5. Set the HVEN bit.
6. Wait for time, t
PGS
(minimum 5 μs).
7. Write data byte to the FLASH-1 address to be programmed.
8. Wait for time, t
PROG
(minimum 30 μs).
9. Repeat steps 7 and 8 until all the bytes within the row are programmed.
10. Clear the PGM bit.
11. Wait for time, t
NVH
(minimum 5 μs)
12. Clear the HVEN bit.
13. Wait for a time, t
RCV
, (typically 1 μs) after which the memory can be accessed in normal read mode.
The FLASH programming algorithm flowchart is shown in Figure 2-6.
NOTE
A. Programming and erasing of FLASH locations can not be performed by code being executed from the
same FLASH array.
B. While these operations must be performed in the order shown, other unrelated operations may occur
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
C. It is highly recommended that interrupts be disabled during program/erase operations.
D. Do not exceed t
PROG
maximum or t
HV
maximum. t
HV
is defined as the cumulative high voltage
programming time to the same row before next erase. t
HV
must satisfy this condition:
t
NVS
+ t
NVH
+ t
PGS
+ (t
PROG
X
64)
≤
t
HV
maximum
