Datasheet
Table Of Contents
- Revision History
- List of Chapters
- Table of Contents
- Chapter 1 General Description
- 1.1 Introduction
- 1.2 Features
- 1.3 MCU Block Diagram
- 1.4 Pin Assignments
- 1.5 Pin Functions
- 1.5.1 Power Supply Pins (VDD and VSS)
- 1.5.2 Oscillator Pins (OSC1 and OSC2)
- 1.5.3 External Reset Pin (RST)
- 1.5.4 External Interrupt Pin (IRQ)
- 1.5.5 CGM Power Supply Pins (VDDA and VSSA)
- 1.5.6 External Filter Capacitor Pin (CGMXFC)
- 1.5.7 ADC Power Supply/Reference Pins (VDDAD/VREFH and VSSAD/VREFL)
- 1.5.8 Port A Input/Output (I/O) Pins (PTA7/KBD7/AD15-PTA0/KBD0/AD8)
- 1.5.9 Port B I/O Pins (PTB7/AD7-PTB0/AD0)
- 1.5.10 Port C I/O Pins (PTC6-PTC0)
- 1.5.11 Port D I/O Pins (PTD7/T2CH1-PTD0/SS)
- 1.5.12 Port E I/O Pins (PTE5-PTE2, PTE1/RxD, and PTE0/TxD)
- 1.5.13 Port F I/O Pins (PTF7/T2CH5-PTF0)
- 1.5.14 Port G I/O Pins (PTG7/AD23-PTBG0/AD16)
- 1.5.15 Unused Pin Termination
- Chapter 2 Memory
- 2.1 Introduction
- 2.2 Unimplemented Memory Locations
- 2.3 Reserved Memory Locations
- 2.4 Input/Output (I/O) Section
- 2.5 Random-Access Memory (RAM)
- 2.6 FLASH-1 Memory (FLASH-1)
- 2.7 FLASH-2 Memory (FLASH-2)
- Chapter 3 Analog-to-Digital Converter (ADC)
- Chapter 4 Clock Generator Module (CGM)
- 4.1 Introduction
- 4.2 Features
- 4.3 Functional Description
- 4.4 I/O Signals
- 4.4.1 Crystal Amplifier Input Pin (OSC1)
- 4.4.2 Crystal Amplifier Output Pin (OSC2)
- 4.4.3 External Filter Capacitor Pin (CGMXFC)
- 4.4.4 PLL Analog Power Pin (Vdda)
- 4.4.5 PLL Analog Ground Pin (Vssa)
- 4.4.6 Oscillator Enable Signal (SIMOSCEN)
- 4.4.7 Oscillator Enable in Stop Mode Bit (OSCENINSTOP)
- 4.4.8 Crystal Output Frequency Signal (CGMXCLK)
- 4.4.9 CGM Base Clock Output (CGMOUT)
- 4.4.10 CGM CPU Interrupt (CGMINT)
- 4.5 CGM Registers
- 4.6 Interrupts
- 4.7 Special Modes
- 4.8 Acquisition/Lock Time Specifications
- Chapter 5 Configuration Register (CONFIG)
- Chapter 6 Computer Operating Properly (COP) Module
- Chapter 7 Central Processor Unit (CPU)
- Chapter 8 External Interrupt (IRQ)
- Chapter 9 Keyboard Interrupt Module (KBI)
- Chapter 10 Low-Power Modes
- 10.1 Introduction
- 10.2 Analog-to-Digital Converter (ADC)
- 10.3 Break Module (BRK)
- 10.4 Central Processor Unit (CPU)
- 10.5 Clock Generator Module (CGM)
- 10.6 Computer Operating Properly Module (COP)
- 10.7 External Interrupt Module (IRQ)
- 10.8 Keyboard Interrupt Module (KBI)
- 10.9 Low-Voltage Inhibit Module (LVI)
- 10.10 Enhanced Serial Communications Interface Module (ESCI)
- 10.11 Serial Peripheral Interface Module (SPI)
- 10.12 Timer Interface Module (TIM1 and TIM2)
- 10.13 Timebase Module (TBM)
- 10.14 Exiting Wait Mode
- 10.15 Exiting Stop Mode
- Chapter 11 Low-Voltage Inhibit (LVI)
- Chapter 12 Input/Output (I/O) Ports
- Chapter 13 Enhanced Serial Communications Interface (ESCI) Module
- Chapter 14 System Integration Module (SIM)
- Chapter 15 Serial Peripheral Interface (SPI) Module
- Chapter 16 Timebase Module (TBM)
- Chapter 17 Timer Interface Module (TIM1)
- Chapter 18 Timer Interface Module (TIM2)
- Chapter 19 Development Support
- Chapter 20 Electrical Specifications
- 20.1 Introduction
- 20.2 Absolute Maximum Ratings
- 20.3 Functional Operating Range
- 20.4 Thermal Characteristics
- 20.5 5.0-Vdc Electrical Characteristics
- 20.6 3.3-Vdc Electrical Characteristics
- 20.7 5.0-Volt Control Timing
- 20.8 3.3-Volt Control Timing
- 20.9 Clock Generation Module (CGM) Characteristics
- 20.10 5.0-Volt ADC Characteristics
- 20.11 3.3-Volt ADC Characteristics
- 20.12 5.0-Volt SPI Characteristics
- 20.13 3.3-Volt SPI Characteristics
- 20.14 Timer Interface Module Characteristics
- 20.15 Memory Characteristics
- Chapter 21 Ordering Information and Mechanical Specifications
- Appendix A MC68HC908GR48A
- Appendix B MC68HC908GR32A
FLASH-2 Memory (FLASH-2)
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
Freescale Semiconductor 51
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
Setting this read/write bit configures the FLASH-2 array for mass or page erase operation.
1 = Mass erase operation selected
0 = Page erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be set at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
2.7.2.2 FLASH-2 Block Protect Register
The FLASH-2 block protect register (FL2BPR) is implemented as a byte within the FLASH-1 memory;
therefore, can only be written during a FLASH-1 programming sequence. The value in this register
determines the starting location of the protected range within the FLASH-2 memory.
NOTE
The FLASH-2 block protect register (FL2BPR) controls the block protection
for the FLASH-2 array. However, FL2BPR is implemented within the
FLASH-1 memory array and therefore, the FLASH-1 control register
(FL1CR) must be used to program/erase FL2BPR.
FL2BPR[7:0] — Block Protect Register Bits 7 to 0
These eight bits represent bits [14:7] of a 16-bit memory address. Bit 15 is a 0 and bits [6:0] are 0s.
The resultant 16-bit address is used for specifying the start address of the FLASH-2 memory for block
protection. FLASH-2 is protected from this start address to the end of FLASH-2 memory at $7FFF.
With this mechanism, the protect start address can be $XX00 and $XX80 (128 byte page boundaries)
within the FLASH-2 array.
Address: $FF81
Bit 7654321Bit 0
Read:
BPR7 BPR6 BPR5 BPR4 BPR3 BPR2 BPR1 BPR0
Write:
Reset: Unaffected by reset
Figure 2-8. FLASH-2 Block Protect Register (FL2BPR)
