Datasheet

Electrical Specifications
Memory Characteristics
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3 Technical Data
Freescale Semiconductor Electrical Specifications 261
18.13 Memory Characteristics
Characteristic Symbol Min Max Unit
RAM data retention voltage
V
RDR
1.3 — V
FLASH block size — 512 Bytes
FLASH programming size — 64 Bytes
FLASH read bus clock frequency
f
Read
(1)
NOTES:
1. f
READ
is defined as the frequency range for which the FLASH memory can be read.
32 k 8.4 M Hz
FLASH block erase time
t
Erase
(2)
2. If the page erase time is longer than t
Erase
(Min), there is no erase-disturb, but it reduced the endurance of the flash memory
2—ms
FLASH mass erase time
t
MErase
(3)
3. If the mass erase time is longer than t
MErase
(Min), there is no erase-disturb, but it reduced the endurance of the flash mem-
ory
2—ms
FLASH PGM/ERASE to HVEN set up time
t
nvs
5—µs
FLASH high-voltage hold time
t
nvh
5—µs
FLASH high-voltage hold time (mass erase)
t
nvhl
100 — µs
FLASH program hold time
t
pgs
10 — µs
FLASH program time
t
PROG
20 — µs
FLASH return to read time
t
rcv
(4)
4. t
rcv
is defined as the time it need before start the read of the flash after turn off the HVEN bit
1—µs
FLASH cumulative program hv period
t
HV
(5)
5. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase
—25ms
FLASH row erase endurance
(6)
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
—10k—Cycles
FLASH row program endurance
(7)
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
—10k—Cycles
FLASH data retention time
(8)
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time speci-
fied.
—10—Years