Datasheet

Flash Control Register

MC68HC908JL3E Family Data Sheet, Rev. 4

Freescale Semiconductor 29

2.7 Flash Control Register

The Flash Control Register controls Flash program and erase operations.

HVEN — High Voltage Enable Bit

This read/write bit enables high voltage from the charge pump to the memory for either program or

erase operation. It can only be set if either PGM=1 or ERASE=1 and the proper sequence for program

or erase is followed.

1 = High voltage enabled to array and charge pump on

0 = High voltage disabled to array and charge pump off

MASS — Mass Erase Control Bit

This read/write bit configures the memory for mass erase operation or page erase operation when the

ERASE bit is set.

1 = Mass erase operation selected

0 = Page erase operation selected

ERASE — Erase Control Bit

This read/write bit configures the memory for erase operation. This bit and the PGM bit should not be

set to 1 at the same time.

1 = Erase operation selected

0 = Erase operation not selected

PGM — Program Control Bit

This read/write bit configures the memory for program operation. This bit and the ERASE bit should

not be set to 1 at the same time.

1 = Program operation selected

0 = Program operation not selected

Address: $FE08

Bit 7654321Bit 0

HVEN MASS ERASE PGM

Write:

Reset:00000000

= Unimplemented

Figure 2-4. Flash Control Register (FLCR)