Datasheet

FLASH Memory (FLASH)
FLASH Program Operation
MC68HC908LJ24/LK24 — Rev. 2.1 Data Sheet
Freescale Semiconductor FLASH Memory (FLASH) 75
Figure 4-3. FLASH Programming Flowchart
Set HVEN bit
Read the FLASH block protect register
Write any data to any FLASH location
within the address range of the row to
Wait for a time, t
nvs
Set PGM bit
Wait for a time, t
pgs
Write data to the FLASH address
to be programmed
Wait for a time, t
prog
Clear PGM bit
Wait for a time, t
nvh
Clear HVEN bit
Wait for a time, t
rcv
Completed
programming
this row?
Y
N
End of programming
The time between each FLASH address change (step 7 to step 7), or
must not exceed the maximum programming
time, t
prog
max.
the time between the last FLASH address programmed
to clearing PGM bit (step 7 to step 10)
NOTE:
1
2
3
4
5
6
7
8
10
11
12
13
Algorithm for programming
a row (64 bytes) of FLASH memory
This row program algorithm assumes the row/s
to be programmed are initially erased.
be programmed