Datasheet

EEPROM Memory
EEPROM Control Registers
MC68HC912D60A — Rev. 3.1 Technical Data
Freescale Semiconductor EEPROM Memory 113
.
BULKP — Bulk Erase Protection
0 = EEPROM can be bulk erased.
1 = EEPROM is protected from being bulk or row erased.
Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
AUTO — Automatic shutdown of program/erase operation.
EEPGM is cleared automatically after the program/erase cycles are
finished when AUTO is set.
0 = Automatic clear of EEPGM is disabled.
1 = Automatic clear of EEPGM is enabled.
Read anytime. Write anytime if EEPGM = 0.
BYTE — Byte and Aligned Word Erase
0 = Bulk or row erase is enabled.
1 = One byte or one aligned word erase only.
Read anytime. Write anytime if EEPGM = 0.
ROW — Row or Bulk Erase (when BYTE = 0)
0 = Erase entire EEPROM array.
1 = Erase only one 32-byte row.
Read anytime. Write anytime if EEPGM = 0.
BYTE and ROW have no effect when ERASE = 0
If BYTE = 1 only the location specified by the address written to the
programming latches will be erased. The operation will be a byte or
an aligned word erase depending on the size of written data.
EEPROG — EEPROM Control $00F3
Bit 7654321Bit 0
BULKP 0 AUTO BYTE ROW ERASE EELAT EEPGM
RESET: 10000000
Table 8-3. Erase Selection
BYTE ROW Block size
0 0 Bulk erase entire EEPROM array
0 1 Row erase 32 bytes
1 0 Byte or aligned word erase
1 1 Byte or aligned word erase