Datasheet

Electrical Specifications
Technical Data MC68HC912D60A — Rev. 3.1
412 Electrical Specifications Freescale Semiconductor
Table 20-10. Flash EEPROM Characteristics
V
DD
= 5.0 Vdc ±10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
Characteristic Symbol Min Max Units
Bytes per row — 64 64 Bytes
Read bus clock frequency
f
READ
32K 8M Hz
Erase time
t
ERAS
88ms
PGM/ERAS to HVEN set up time
t
NVS
10 — µs
High voltage hold time
t
NVL
5—µs
High voltage hold time (erase)
t
NVHL
100 — µs
Program hold time
t
PGS
5—µs
Program time
t
FPGM
30 40 µs
Return to read time
t
RCV
1—µs
Cumulative program hv period
t
HV
—8ms
Row program/erase endurance — 100 cycles
Data retention —
10
(1)
years
1. Based on the average life time operating temperature of 70°C.
Table 20-11. Pulse Width Modulator Characteristics
V
DD
= 5.0 Vdc ±10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
Characteristic Symbol Min Max Unit
ECLK frequency
f
eclk
0.004 8.0 MHz
A-clock frequency
Selectable
f
aclk
f
eclk
/128
f
eclk
Hz
BCLK frequency
Selectable
f
bclk
f
eclk
/128
f
eclk
Hz
Left-aligned PWM frequency
8-bit
16-bit
f
lpwm
f
eclk
/1M
f
eclk
/256M
f
eclk
/2
f
eclk
/2
Hz
Hz
Left-aligned PWM resolution
r
lpwm
f
eclk
/4K f
eclk
Hz
Center-aligned PWM frequency
8-bit
16-bit
f
cpwm
f
eclk
/2M
f
eclk
/512M
f
eclk
f
eclk
Hz
Hz
Center-aligned PWM resolution
r
cpwm
f
eclk
/4K f
eclk
Hz