Datasheet

Electrical Characteristics
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor 23
3.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory. For detailed information about program/erase operations, see the reference manual.
Supply current Stop, reset, module off
T
I
DDAD
—0.011 1 μA
ADC asynchronous clock
source
High speed (ADLPC = 0)
T
f
ADACK
—3.3—
MHz
Low power (ADLPC = 1) — 2 —
Conversion time (including
sample time)
Short sample (ADLSMP=0)
Pt
ADC
—20—
ADCK
cycles
Long sample (ADLSMP=1) — 40 —
Sample time
Short sample (ADLSMP=0)
Pt
ADS
—3.5—
ADCK
cycles
Long sample (ADLSMP=1) — 23.5 —
Total unadjusted error
10 bit mode
CE
TUE
— ±1 ±2.5
LSB
2
8 bit mode — ±0.5 ±1.0
Differential non-linearity
10 bit mode P
DNL
— ±0.5 ±1.0
LSB
2
8 bit mode T — ±0.3 ±0.5
Monotonicity and No-Missing-Codes guaranteed
Integral non-linearity
10 bit mode
CINL
— ±0.5 ±1.0
LSB
2
8 bit mode — ±0.3 ±0.5
Zero-scale error
10 bit mode P
E
ZS
— ±0.5 ±1.5
LSB
2
8 bit mode T — ±0.5 ±0.5
Full-Scale error
VADIN = VDDA
10 bit mode P
E
FS
— ±0.5 ±1.5
LSB
2
8 bit mode T — ±0.5 ±0.5
Quantization error
10 bit mode
DE
Q
——±0.5
LSB
2
8 bit mode — — ±0.5
Input leakage error
pad leakage
3
* RAS
10 bit mode
DE
IL
— ±0.2 ±2.5
LSB
2
8 bit mode — ±0.1 ±1
1
Typical values assume Temp = 25 °C, f
ADCK
= 1.0 MHz unless otherwise stated. Typical values are for reference only and are
not tested in production.
2
1 LSB = (V
REFH
– V
REFL
)/2
N
3
Based on input pad leakage current. Refer to pad electrical.
Table 16. Flash Characteristics
Characteristic Symbol Min Typical
1
Max Unit
Supply voltage for program/erase V
DD
2.7 — 5.5 V
Table 15. 10-bit ADC Characteristics (continued)
Characteristic Conditions C Symb Min Typical
1
Max Unit