Datasheet

MC9RS08KA8 Series MCU Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor24
Figure 22. Example V
PP
Filtering
Program/Erase voltage V
PP
11.8 12 12.2 V
VPP current
Program
Mass erase
I
VPP_prog
I
VPP_erase
—
—
—
—
200
100
μA
μA
Supply voltage for read operation
0 < fBus < 10 MHz
V
Read
1.8 — 5.5 V
Byte program time t
prog
20 — 40 μs
Mass erase time t
me
500 — — ms
Cumulative program HV time
2
t
hv
——8ms
Total cumulative HV time
(total of tme & thv applied to device)
t
hv_total
——2hours
HVEN to program setup time t
pgs
10 — — μs
PGM/MASS to HVEN setup time t
nvs
5——μs
HVEN hold time for PGM t
nvh
5——μs
HVEN hold time for MASS t
nvh1
100 — — μs
V
PP
to PGM/MASS setup time t
vps
20 — — ns
HVEN to V
PP
hold time t
vph
20 — — ns
V
PP
rise time
3
t
vrs
200 — — ns
Recovery time t
rcv
1——μs
Program/erase endurance
T
L to TH = –40°C to 85°C
— 1000 — — cycles
Data retention t
D_ret
15 — — years
1
Typicals are measured at 25 °C.
2
t
hv
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
programmed more than twice before next erase.
3
Fast V
PP
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
and cause permanent damage to the pad. External filtering for the V
PP
power source is recommended. An example V
PP
filter is shown in Figure 22.
Table 16. Flash Characteristics (continued)
Characteristic Symbol Min Typical
1
Max Unit
100 Ω
V
PP
12 V
1 nF