Datasheet

Chapter 3 Electrical Characteristics and Timing Specifications
MC9S08AC128 MCU Series Data Sheet, Rev. 4
Freescale Semiconductor 33
3.12 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
Table 3-15. Flash Characteristics
Num C Characteristic Symbol Min Typ
1
1
Typical values are based on characterization data at V
DD
= 5.0 V, 25C unless otherwise stated.
Max Unit
1P
Supply voltage for program/erase
V
prog/erase
2.7 5.5 V
2P
Supply voltage for read operation
V
Read
2.7 5.5 V
 P
Internal FCLK frequency
2
2
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
4P
Internal FCLK period (1/FCLK)
t
Fcyc
56.67s
5P
Byte program time (random location)
(2)
t
prog
9
t
Fcyc
6C
Byte program time (burst mode)
(2)
t
Burst
4
t
Fcyc
7P
Page erase time
3
3
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
t
Page
4000
t
Fcyc
8P
Mass erase time
(2)
t
Mass
20,000
t
Fcyc
9C
Program/erase endurance
4
T
L
to T
H
= –40C to + 125C
T = 25C
4
Typical endurance for Flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Ty pi c al
Endurance for Nonvolatile Memory.
10,000
—
—
100,000
—
—
cycles
10 C
Data retention
5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years