Datasheet

Appendix A Electrical Characteristics and Timing Specifications
MC9S08AC16 Series Data Sheet, Rev. 9
Freescale Semiconductor 317
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
A.13 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
Table A-15. FLASH Characteristics
Num C Characteristic Symbol Min Typ
1
1
Typical values are based on characterization data at V
DD
= 5.0 V, 25C unless otherwise stated.
Max Unit
1
Supply voltage for program/erase
V
prog/erase
2.7 5.5 V
2
Supply voltage for read operation
V
Read
2.7 5.5 V

Internal FCLK frequency
2
2
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
4
Internal FCLK period (1/FCLK)
t
Fcyc
56.67s
5
Byte program time (random location)
(2)
t
prog
9
t
Fcyc
6
Byte program time (burst mode)
(2)
t
Burst
4
t
Fcyc
7
Page erase time
3
3
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
t
Page
4000
t
Fcyc
8
Mass erase time
(2)
t
Mass
20,000
t
Fcyc
9C
Program/erase endurance
4
T
L
to T
H
= –40C to + 125C
T = 25C
4
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Ty pi c al
Endurance for Nonvolatile Memory.
10,000
—
—
100,000
—
—
cycles
10
Data retention
5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years